SQ3426EEV Specs and Replacement

Type Designator: SQ3426EEV

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm

Package: TSOP-6

SQ3426EEV substitution

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SQ3426EEV datasheet

 ..1. Size:203K  vishay
 sq3426eev.pdf pdf_icon

SQ3426EEV

SQ3426EEV www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) ( ) at VGS = 10 V 0.042 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.063 Typical ESD Protection 800 V ID (A) 7 AEC-Q101 Qualified Configuration Single 100 % Rg and U... See More ⇒

 7.1. Size:136K  vishay
 sq3426ev.pdf pdf_icon

SQ3426EEV

SQ3426EV www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 AEC-Q101 qualified RDS(on) ( ) at VGS = 10 V 0.042 100 % Rg and UIS tested RDS(on) ( ) at VGS = 4.5 V 0.063 Material categorization ID (A) 7 for definitions of compliance please see Configuration Single www.vish... See More ⇒

 8.1. Size:258K  vishay
 sq3426aeev.pdf pdf_icon

SQ3426EEV

SQ3426AEEV www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 Typical ESD protection 800 V HBM RDS(on) ( ) at VGS = 10 V 0.042 AEC-Q101 qualified RDS(on) ( ) at VGS = 4.5 V 0.063 100 % Rg and UIS tested ID (A) 7 Material categorization Configuration Single for definit... See More ⇒

 9.1. Size:235K  vishay
 sq3427ev.pdf pdf_icon

SQ3426EEV

SQ3427EV www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -60 AEC-Q101 qualified c RDS(on) ( ) at VGS = -10 V 0.095 100 % Rg and UIS tested RDS(on) ( ) at VGS = -4.5 V 0.135 Material categorization ID (A) -5.3 for definitions of compliance please see Configuration Sing... See More ⇒

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Detailed specifications: SQ2361ES, SQ2362ES, SQ2389ES, SQ2398ES, SQ3410EV, SQ3418EEV, SQ3418EV, SQ3419EEV, 20N60, SQ3426EV, SQ3427EEV, SQ3427EV, SQ3442EV, SQ3456BEV, SQ3456EV, SQ3457EV, SQ3460EV

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