SQ3426EEV MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SQ3426EEV
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 5 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Максимально допустимый постоянный ток стока |Id|: 7 A
Максимальная температура канала (Tj): 175 °C
Время нарастания (tr): 12 ns
Выходная емкость (Cd): 85 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.042 Ohm
Тип корпуса: TSOP-6
SQ3426EEV Datasheet (PDF)
sq3426eev.pdf
SQ3426EEVwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.042 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.063 Typical ESD Protection 800 VID (A) 7 AEC-Q101 QualifiedConfiguration Single 100 % Rg and U
sq3426ev.pdf
SQ3426EVwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 AEC-Q101 qualifiedRDS(on) () at VGS = 10 V 0.042 100 % Rg and UIS testedRDS(on) () at VGS = 4.5 V 0.063 Material categorization: ID (A) 7for definitions of compliance please see Configuration Singlewww.vish
sq3426aeev.pdf
SQ3426AEEVwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 Typical ESD protection 800 V HBMRDS(on) () at VGS = 10 V 0.042 AEC-Q101 qualifiedRDS(on) () at VGS = 4.5 V 0.063 100 % Rg and UIS testedID (A) 7 Material categorization: Configuration Singlefor definit
sq3427ev.pdf
SQ3427EVwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -60 AEC-Q101 qualified cRDS(on) () at VGS = -10 V 0.095 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.135 Material categorization:ID (A) -5.3for definitions of compliance please see Configuration Sing
sq3427aeev.pdf
SQ3427AEEVwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -60 AEC-Q101 qualified cRDS(on) () at VGS = -10 V 0.095 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.135 Typical ESD protection 800 VID (A) -5.3Configuration Single Material categorization:for
sq3425ev.pdf
SQ3425EVwww.vishay.comVishay SiliconixAutomotive P-Channel 20 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -20 AEC-Q101 qualified cRDS(on) () at VGS = -4.5 V 0.060 100 % Rg and UIS testedRDS(on) () at VGS = -2.5 V 0.100 Material categorization:ID (A) -7.4for definitions of compliance please seeConfiguration Singlew
sq3427eev.pdf
SQ3427EEVwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 60DefinitionRDS(on) () at VGS = - 10 V 0.082 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.115 AEC-Q101 QualifiedcID (A) - 5.5 100 % Rg and UIS TestedConfiguration Single Typica
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