SQ3442EV MOSFET. Datasheet pdf. Equivalent
Type Designator: SQ3442EV
Marking Code: 8F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.6 V
|Id|ⓘ - Maximum Drain Current: 4.3 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 3.5 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 71 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: TSOP-6
SQ3442EV Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SQ3442EV Datasheet (PDF)
..1. Size:207K vishay
sq3442ev.pdf
sq3442ev.pdf
SQ3442EVwww.vishay.comVishay SiliconixAutomotive N-Channel 20 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 20DefinitionRDS(on) () at VGS = 4.5 V 0.055 TrenchFET Power MOSFETRDS(on) () at VGS = 2.5 V 0.085 AEC-Q101 QualifiedcID (A) 4.3 100 % Rg and UIS TestedConfiguration Single Compliant to R
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