SQ3442EV Specs and Replacement
Type Designator: SQ3442EV
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 4.3 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 71 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: TSOP-6
SQ3442EV substitution
- MOSFET ⓘ Cross-Reference Search
SQ3442EV datasheet
sq3442ev.pdf
SQ3442EV www.vishay.com Vishay Siliconix Automotive N-Channel 20 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 20 Definition RDS(on) ( ) at VGS = 4.5 V 0.055 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 2.5 V 0.085 AEC-Q101 Qualifiedc ID (A) 4.3 100 % Rg and UIS Tested Configuration Single Compliant to R... See More ⇒
Detailed specifications: SQ3410EV, SQ3418EEV, SQ3418EV, SQ3419EEV, SQ3426EEV, SQ3426EV, SQ3427EEV, SQ3427EV, IRFP460, SQ3456BEV, SQ3456EV, SQ3457EV, SQ3460EV, SQ3469EV, SQ3481EV, SQ3985EV, SQ4182EY
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
