All MOSFET. SQ3442EV Datasheet

 

SQ3442EV Datasheet and Replacement


   Type Designator: SQ3442EV
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 4.3 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 71 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: TSOP-6
 

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SQ3442EV Datasheet (PDF)

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SQ3442EV

SQ3442EVwww.vishay.comVishay SiliconixAutomotive N-Channel 20 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 20DefinitionRDS(on) () at VGS = 4.5 V 0.055 TrenchFET Power MOSFETRDS(on) () at VGS = 2.5 V 0.085 AEC-Q101 QualifiedcID (A) 4.3 100 % Rg and UIS TestedConfiguration Single Compliant to R

Datasheet: SQ3410EV , SQ3418EEV , SQ3418EV , SQ3419EEV , SQ3426EEV , SQ3426EV , SQ3427EEV , SQ3427EV , IRF640 , SQ3456BEV , SQ3456EV , SQ3457EV , SQ3460EV , SQ3469EV , SQ3481EV , SQ3985EV , SQ4182EY .

History: PMN25ENEA | PMV30ENEA | AON7442 | IXFR24N90P | P0470ATFS | DH100P30CD | IXFP10N60P

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