SQ3457EV
MOSFET. Datasheet pdf. Equivalent
Type Designator: SQ3457EV
Marking Code: 8I
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 6.8
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 14
nC
trⓘ - Rise Time: 9
nS
Cossⓘ -
Output Capacitance: 140
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065
Ohm
Package:
TSOP-6
SQ3457EV
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SQ3457EV
Datasheet (PDF)
..1. Size:205K vishay
sq3457ev.pdf
SQ3457EVwww.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) - 30 TrenchFET Power MOSFETRDS(on) () at VGS = 10 V 0.065 AEC-Q101 QualifieddRDS(on) () at VGS = 4.5 V 0.100 100 % Rg and UIS TestedID (A) - 6.8 Compliant to RoHS Directive 2002/
9.1. Size:209K vishay
sq3456ev.pdf
SQ3456EVwww.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 AEC-Q101 QualifieddRDS(on) () at VGS = 10 V 0.035 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.052 Material categorization:ID (A) 8For definitions of compliance please seeConfiguration Singlewww.vis
9.2. Size:229K vishay
sq3456bev.pdf
SQ3456BEVwww.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 AEC-Q101 QualifiedcRDS(on) () at VGS = 10 V 0.035 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.052 Material categorization:ID (A) 7.8For definitions of compliance please seeConfiguration Singlewww.
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