SQ3460EV MOSFET. Datasheet pdf. Equivalent
Type Designator: SQ3460EV
Marking Code: 8J
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 9.3 nC
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 117 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TSOP-6
SQ3460EV Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SQ3460EV Datasheet (PDF)
sq3460ev.pdf
SQ3460EVwww.vishay.comVishay SiliconixAutomotive N-Channel 20 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 20DefinitionRDS(on) () at VGS = 4.5 V 0.030 TrenchFET Power MOSFETRDS(on) () at VGS = 2.5 V 0.034 AEC-Q101 QualifieddRDS(on) () at VGS = 1.8 V 0.038 100 % Rg and UIS TestedID (A) 8 Co
sq3469ev.pdf
SQ3469EVwww.vishay.comVishay SiliconixAutomotive P-Channel 20 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 20DefinitionRDS(on) () at VGS = - 10 V 0.036 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.064 AEC-Q101 QualifiedcID (A) - 8 100 % Rg and UIS TestedConfiguration Single Compliant
sq3461ev.pdf
SQ3461EVwww.vishay.comVishay SiliconixAutomotive P-Channel 12 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -12 AEC-Q101 qualified cRDS(on) () at VGS = -4.5 V 0.025 100 % Rg and UIS testedRDS(on) () at VGS = -2.5 V 0.032 Compliant to RoHS Directive 2002/95/ECRDS(on) () at VGS = -1.8 V 0.043ID (A) -8 Material cate
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