SQ3481EV Specs and Replacement

Type Designator: SQ3481EV

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm

Package: TSOP-6

SQ3481EV substitution

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SQ3481EV datasheet

 ..1. Size:202K  vishay
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SQ3481EV

SQ3481EV www.vishay.com Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 C MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) - 30 TrenchFET Power MOSFET RDS(on) ( ) at VGS = - 10 V 0.043 AEC-Q101 Qualifiedc RDS(on) ( ) at VGS = - 4.5 V 0.070 100 % Rg and UIS Tested ID (A) - 7.5 Compliant to RoHS Directive 2... See More ⇒

Detailed specifications: SQ3427EEV, SQ3427EV, SQ3442EV, SQ3456BEV, SQ3456EV, SQ3457EV, SQ3460EV, SQ3469EV, IRF640N, SQ3985EV, SQ4182EY, SQ4184EY, SQ4282EY, SQ4284EY, SQ4330EY, SQ4401DY, SQ4401EY

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