All MOSFET. SQ3481EV Datasheet

 

SQ3481EV Datasheet and Replacement


   Type Designator: SQ3481EV
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm
   Package: TSOP-6
 

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SQ3481EV Datasheet (PDF)

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SQ3481EV

SQ3481EVwww.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) - 30 TrenchFET Power MOSFETRDS(on) () at VGS = - 10 V 0.043 AEC-Q101 QualifiedcRDS(on) () at VGS = - 4.5 V 0.070 100 % Rg and UIS TestedID (A) - 7.5 Compliant to RoHS Directive 2

Datasheet: SQ3427EEV , SQ3427EV , SQ3442EV , SQ3456BEV , SQ3456EV , SQ3457EV , SQ3460EV , SQ3469EV , IRF630 , SQ3985EV , SQ4182EY , SQ4184EY , SQ4282EY , SQ4284EY , SQ4330EY , SQ4401DY , SQ4401EY .

History: 2SK3449 | UT30P04

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