All MOSFET. SQ4282EY Datasheet

 

SQ4282EY Datasheet and Replacement


   Type Designator: SQ4282EY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 396 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0123 Ohm
   Package: SO-8
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SQ4282EY Datasheet (PDF)

 ..1. Size:255K  vishay
 sq4282ey.pdf pdf_icon

SQ4282EY

SQ4282EYwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 AEC-Q101 QualifiedRDS(on) () at VGS = 10 V 0.0123 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.0135 Material categorization:ID (A) 8For definitions of compliance please see Configuration Dual

 9.1. Size:253K  vishay
 sq4284ey.pdf pdf_icon

SQ4282EY

SQ4284EYwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 AEC-Q101 QualifiedRDS(on) () at VGS = 10 V 0.0135 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.0148 Material categorization:For definitions of compliance please seeID (A) 8www.vishay.com/doc?9991

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: LSC65R280HT | IPB22N03S4L-15 | 2SK3700

Keywords - SQ4282EY MOSFET datasheet

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