SQ4282EY Specs and Replacement
Type Designator: SQ4282EY
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 396 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0123 Ohm
Package: SO-8
SQ4282EY substitution
- MOSFET ⓘ Cross-Reference Search
SQ4282EY datasheet
sq4282ey.pdf
SQ4282EY www.vishay.com Vishay Siliconix Automotive Dual N-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 30 AEC-Q101 Qualified RDS(on) ( ) at VGS = 10 V 0.0123 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.0135 Material categorization ID (A) 8 For definitions of compliance please see Configuration Dual ... See More ⇒
sq4284ey.pdf
SQ4284EY www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 40 AEC-Q101 Qualified RDS(on) ( ) at VGS = 10 V 0.0135 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.0148 Material categorization For definitions of compliance please see ID (A) 8 www.vishay.com/doc?9991... See More ⇒
Detailed specifications: SQ3456EV, SQ3457EV, SQ3460EV, SQ3469EV, SQ3481EV, SQ3985EV, SQ4182EY, SQ4184EY, IRF3710, SQ4284EY, SQ4330EY, SQ4401DY, SQ4401EY, SQ4410EY, SQ4425EY, SQ4431EY, SQ4435EY
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