SQ4282EY Datasheet and Replacement
Type Designator: SQ4282EY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 396 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0123 Ohm
Package: SO-8
SQ4282EY substitution
SQ4282EY Datasheet (PDF)
sq4282ey.pdf

SQ4282EYwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 AEC-Q101 QualifiedRDS(on) () at VGS = 10 V 0.0123 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.0135 Material categorization:ID (A) 8For definitions of compliance please see Configuration Dual
sq4284ey.pdf

SQ4284EYwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 AEC-Q101 QualifiedRDS(on) () at VGS = 10 V 0.0135 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.0148 Material categorization:For definitions of compliance please seeID (A) 8www.vishay.com/doc?9991
Datasheet: SQ3456EV , SQ3457EV , SQ3460EV , SQ3469EV , SQ3481EV , SQ3985EV , SQ4182EY , SQ4184EY , P55NF06 , SQ4284EY , SQ4330EY , SQ4401DY , SQ4401EY , SQ4410EY , SQ4425EY , SQ4431EY , SQ4435EY .
History: IPS060N03LG | SLI80R850SJ | BLP039N08-B | SSM6K407TU | NCE60N1K0I | AP9467GS | 2SK1151L
Keywords - SQ4282EY MOSFET datasheet
SQ4282EY cross reference
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History: IPS060N03LG | SLI80R850SJ | BLP039N08-B | SSM6K407TU | NCE60N1K0I | AP9467GS | 2SK1151L



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