SQ4284EY MOSFET. Datasheet pdf. Equivalent
Type Designator: SQ4284EY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 30 nC
trⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 252 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
Package: SO-8
SQ4284EY Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SQ4284EY Datasheet (PDF)
sq4284ey.pdf
SQ4284EYwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 AEC-Q101 QualifiedRDS(on) () at VGS = 10 V 0.0135 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.0148 Material categorization:For definitions of compliance please seeID (A) 8www.vishay.com/doc?9991
sq4282ey.pdf
SQ4282EYwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 AEC-Q101 QualifiedRDS(on) () at VGS = 10 V 0.0123 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.0135 Material categorization:ID (A) 8For definitions of compliance please see Configuration Dual
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: NCEP25ND10AG
