All MOSFET. SQ4284EY Datasheet

 

SQ4284EY Datasheet and Replacement


   Type Designator: SQ4284EY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 252 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
   Package: SO-8
 

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SQ4284EY Datasheet (PDF)

 ..1. Size:253K  vishay
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SQ4284EY

SQ4284EYwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 AEC-Q101 QualifiedRDS(on) () at VGS = 10 V 0.0135 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.0148 Material categorization:For definitions of compliance please seeID (A) 8www.vishay.com/doc?9991

 9.1. Size:255K  vishay
 sq4282ey.pdf pdf_icon

SQ4284EY

SQ4282EYwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 AEC-Q101 QualifiedRDS(on) () at VGS = 10 V 0.0123 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.0135 Material categorization:ID (A) 8For definitions of compliance please see Configuration Dual

Datasheet: SQ3457EV , SQ3460EV , SQ3469EV , SQ3481EV , SQ3985EV , SQ4182EY , SQ4184EY , SQ4282EY , IRFB4227 , SQ4330EY , SQ4401DY , SQ4401EY , SQ4410EY , SQ4425EY , SQ4431EY , SQ4435EY , SQ4470EY .

History: GP2M023A050N

Keywords - SQ4284EY MOSFET datasheet

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