All MOSFET. SQ4401DY Datasheet

 

SQ4401DY MOSFET. Datasheet pdf. Equivalent

Type Designator: SQ4401DY

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 6 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 15.8 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 74 nC

Rise Time (tr): 76 nS

Drain-Source Capacitance (Cd): 440 pF

Maximum Drain-Source On-State Resistance (Rds): 0.014 Ohm

Package: SO-8

SQ4401DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQ4401DY Datasheet (PDF)

0.1. sq4401dy.pdf Size:250K _vishay

SQ4401DY
SQ4401DY

SQ4401DYwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 150 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 40DefinitionRDS(on) () at VGS = - 10 V 0.014 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.023 AEC-Q101 QualifiedID (A) - 15.8 100 % Rg and UIS TestedConfiguration Single Complia

8.1. sq4401ey.pdf Size:250K _vishay

SQ4401DY
SQ4401DY

SQ4401EYwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 40DefinitionRDS(on) () at VGS = - 10 V 0.014 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.023 AEC-Q101 QualifiedID (A) - 17.3 100 % Rg and UIS TestedConfiguration Single Complia

 

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