All MOSFET. SQ4401EY Datasheet

 

SQ4401EY MOSFET. Datasheet pdf. Equivalent


   Type Designator: SQ4401EY
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 7.14 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 17.3 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 74 nC
   trⓘ - Rise Time: 76 nS
   Cossⓘ - Output Capacitance: 440 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: SO-8

 SQ4401EY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQ4401EY Datasheet (PDF)

 ..1. Size:250K  vishay
 sq4401ey.pdf

SQ4401EY SQ4401EY

SQ4401EYwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 40DefinitionRDS(on) () at VGS = - 10 V 0.014 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.023 AEC-Q101 QualifiedID (A) - 17.3 100 % Rg and UIS TestedConfiguration Single Complia

 8.1. Size:250K  vishay
 sq4401dy.pdf

SQ4401EY SQ4401EY

SQ4401DYwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 150 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 40DefinitionRDS(on) () at VGS = - 10 V 0.014 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.023 AEC-Q101 QualifiedID (A) - 15.8 100 % Rg and UIS TestedConfiguration Single Complia

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IXTA100N04T2

 

 
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