SQ4435EY Specs and Replacement
Type Designator: SQ4435EY
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 6.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 392 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: SO-8
SQ4435EY substitution
SQ4435EY Specs
sq4435ey.pdf
SQ4435EY www.vishay.com Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) - 30 Definition RDS(on) ( ) at VGS = - 10 V 0.018 TrenchFET Power MOSFET RDS(on) ( ) at VGS = - 4.5 V 0.031 AEC-Q101 Qualifiedc ID (A) - 15 100 % Rg and UIS Tested Configuration Single Complian... See More ⇒
sq4435ey.pdf
SQ4435EY www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S 3 6 D ... See More ⇒
sq4431ey.pdf
SQ4431EY www.vishay.com Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) - 30 100 % Rg and UIS Tested RDS(on) ( ) at VGS = - 10 V 0.030 AEC-Q101 Qualifiedc RDS(on) ( ) at VGS = - 4.5 V 0.052 Material categorization ID (A) - 10.8 For definitions of compliance please see Configuration... See More ⇒
Detailed specifications: SQ4282EY , SQ4284EY , SQ4330EY , SQ4401DY , SQ4401EY , SQ4410EY , SQ4425EY , SQ4431EY , IRFP250N , SQ4470EY , SQ4483EEY , SQ4483EY , SQ4532AEY , SQ4840EY , SQ4850EY , SQ4917EY , SQ4920EY .
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