All MOSFET. SQ4435EY Datasheet

 

SQ4435EY MOSFET. Datasheet pdf. Equivalent

Type Designator: SQ4435EY

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 6.8 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 15 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 38.3 nC

Rise Time (tr): 9 nS

Drain-Source Capacitance (Cd): 392 pF

Maximum Drain-Source On-State Resistance (Rds): 0.018 Ohm

Package: SO-8

SQ4435EY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQ4435EY Datasheet (PDF)

0.1. sq4435ey.pdf Size:248K _vishay

SQ4435EY
SQ4435EY

SQ4435EYwww.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 30DefinitionRDS(on) () at VGS = - 10 V 0.018 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.031 AEC-Q101 QualifiedcID (A) - 15 100 % Rg and UIS TestedConfiguration Single Complian

9.1. sq4431ey.pdf Size:110K _vishay

SQ4435EY
SQ4435EY

SQ4431EYwww.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 30 100 % Rg and UIS TestedRDS(on) () at VGS = - 10 V 0.030 AEC-Q101 QualifiedcRDS(on) () at VGS = - 4.5 V 0.052 Material categorization: ID (A) - 10.8For definitions of compliance please see Configuration

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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