SQ4483EY MOSFET. Datasheet pdf. Equivalent
Type Designator: SQ4483EY
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 7 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
Maximum Drain Current |Id|: 30 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 75 nC
Rise Time (tr): 146 nS
Drain-Source Capacitance (Cd): 712 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0085 Ohm
Package: SO-8
SQ4483EY Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SQ4483EY Datasheet (PDF)
0.1. sq4483ey.pdf 
Size:298K _vishay
SQ4483EYwww.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -30 AEC-Q101 qualified cRDS(on) () at VGS = -10 V 0.0085 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.0200 Material categorization: ID (A) -22for definitions of compliance please see Configuration Single
7.1. sq4483eey.pdf Size:254K _vishay
SQ4483EEYwww.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 30 ESD Protection: 3000 VRDS(on) () at VGS = - 10 V 0.0085 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.0200 AEC-Q101 QualifiedcID (A) - 22 Material categorization:Configuration SingleFor de
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