All MOSFET. SQ4483EY Datasheet

 

SQ4483EY MOSFET. Datasheet pdf. Equivalent

Type Designator: SQ4483EY

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 7 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 30 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 75 nC

Rise Time (tr): 146 nS

Drain-Source Capacitance (Cd): 712 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0085 Ohm

Package: SO-8

SQ4483EY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQ4483EY Datasheet (PDF)

0.1. sq4483ey.pdf Size:298K _vishay

SQ4483EY
SQ4483EY

SQ4483EYwww.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -30 AEC-Q101 qualified cRDS(on) () at VGS = -10 V 0.0085 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.0200 Material categorization: ID (A) -22for definitions of compliance please see Configuration Single

7.1. sq4483eey.pdf Size:254K _vishay

SQ4483EY
SQ4483EY

SQ4483EEYwww.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 30 ESD Protection: 3000 VRDS(on) () at VGS = - 10 V 0.0085 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.0200 AEC-Q101 QualifiedcID (A) - 22 Material categorization:Configuration SingleFor de

 

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