All MOSFET. SQ4483EY Datasheet

 

SQ4483EY Datasheet and Replacement


   Type Designator: SQ4483EY
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 146 nS
   Cossⓘ - Output Capacitance: 712 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: SO-8
 

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SQ4483EY Datasheet (PDF)

 ..1. Size:298K  vishay
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SQ4483EY

SQ4483EYwww.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -30 AEC-Q101 qualified cRDS(on) () at VGS = -10 V 0.0085 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.0200 Material categorization: ID (A) -22for definitions of compliance please see Configuration Single

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SQ4483EY

SQ4483EEYwww.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 30 ESD Protection: 3000 VRDS(on) () at VGS = - 10 V 0.0085 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.0200 AEC-Q101 QualifiedcID (A) - 22 Material categorization:Configuration SingleFor de

Datasheet: SQ4401DY , SQ4401EY , SQ4410EY , SQ4425EY , SQ4431EY , SQ4435EY , SQ4470EY , SQ4483EEY , 2N7000 , SQ4532AEY , SQ4840EY , SQ4850EY , SQ4917EY , SQ4920EY , SQ4936EY , SQ4937EY , SQ4940EY .

History: RU30P4C | STU303S | FDS7088N3 | FQD7N10L | IPU075N03L | IXTA02N250HV | SI4421DY-T1

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