SQ4920EY MOSFET. Datasheet pdf. Equivalent
Type Designator: SQ4920EY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 4.4 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
Maximum Drain Current |Id|: 8 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 19.7 nC
Rise Time (tr): 10 nS
Drain-Source Capacitance (Cd): 225 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0175 Ohm
Package: SO-8
SQ4920EY Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SQ4920EY Datasheet (PDF)
0.1. sq4920ey.pdf 
Size:251K _vishay
SQ4920EYwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 AEC-Q101 QualifieddRDS(on) () at VGS = 10 V 0.0145 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.0175 Material categorization:ID (A) per leg 8For definitions of compliance please seeConfiguration
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