SQ4920EY Datasheet and Replacement
Type Designator: SQ4920EY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 4.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 225 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0175 Ohm
Package: SO-8
SQ4920EY substitution
SQ4920EY Datasheet (PDF)
sq4920ey.pdf
SQ4920EYwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 AEC-Q101 QualifieddRDS(on) () at VGS = 10 V 0.0145 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.0175 Material categorization:ID (A) per leg 8For definitions of compliance please seeConfiguration
Datasheet: SQ4435EY , SQ4470EY , SQ4483EEY , SQ4483EY , SQ4532AEY , SQ4840EY , SQ4850EY , SQ4917EY , 2N7000 , SQ4936EY , SQ4937EY , SQ4940EY , SQ4942EY , SQ4946AEY , SQ4949EY , SQ4953EY , SQ4961EY .
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History: AOTF14N50 | 2SK1590
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