All MOSFET. SQ4920EY Datasheet

 

SQ4920EY Datasheet and Replacement


   Type Designator: SQ4920EY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 4.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 225 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0175 Ohm
   Package: SO-8
 

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SQ4920EY Datasheet (PDF)

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SQ4920EY

SQ4920EYwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 AEC-Q101 QualifieddRDS(on) () at VGS = 10 V 0.0145 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.0175 Material categorization:ID (A) per leg 8For definitions of compliance please seeConfiguration

Datasheet: SQ4435EY , SQ4470EY , SQ4483EEY , SQ4483EY , SQ4532AEY , SQ4840EY , SQ4850EY , SQ4917EY , IRF4905 , SQ4936EY , SQ4937EY , SQ4940EY , SQ4942EY , SQ4946AEY , SQ4949EY , SQ4953EY , SQ4961EY .

History: SKI04024

Keywords - SQ4920EY MOSFET datasheet

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