SQ4961EY Specs and Replacement

Type Designator: SQ4961EY

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.4 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: SO-8

SQ4961EY substitution

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SQ4961EY datasheet

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SQ4961EY

SQ4961EY www.vishay.com Vishay Siliconix Automotive Dual P-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) - 60 AEC-Q101 Qualified RDS(on) ( ) at VGS = - 10 V 0.085 100 % Rg and UIS Tested RDS(on) ( ) at VGS = - 4.5 V 0.115 Material categorization ID (A) per leg - 4.4 For definitions of compliance please see Con... See More ⇒

Detailed specifications: SQ4920EY, SQ4936EY, SQ4937EY, SQ4940EY, SQ4942EY, SQ4946AEY, SQ4949EY, SQ4953EY, K4145, SQ7002K, SQ7414AEN, SQ7414AENW, SQ7414EN, SQ7415AEN, SQ7415AENW, SQ7415EN, SQ9407EY

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