All MOSFET. SQ4961EY Datasheet

 

SQ4961EY Datasheet and Replacement


   Type Designator: SQ4961EY
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.4 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: SO-8
 

 SQ4961EY substitution

   - MOSFET ⓘ Cross-Reference Search

 

SQ4961EY Datasheet (PDF)

 ..1. Size:257K  vishay
 sq4961ey.pdf pdf_icon

SQ4961EY

SQ4961EYwww.vishay.comVishay SiliconixAutomotive Dual P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 60 AEC-Q101 QualifiedRDS(on) () at VGS = - 10 V 0.085 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.115 Material categorization:ID (A) per leg - 4.4For definitions of compliance please see Con

Datasheet: SQ4920EY , SQ4936EY , SQ4937EY , SQ4940EY , SQ4942EY , SQ4946AEY , SQ4949EY , SQ4953EY , IRFB3607 , SQ7002K , SQ7414AEN , SQ7414AENW , SQ7414EN , SQ7415AEN , SQ7415AENW , SQ7415EN , SQ9407EY .

Keywords - SQ4961EY MOSFET datasheet

 SQ4961EY cross reference
 SQ4961EY equivalent finder
 SQ4961EY lookup
 SQ4961EY substitution
 SQ4961EY replacement

 

 
Back to Top

 


 
.