SQ7415AENW
MOSFET. Datasheet pdf. Equivalent
Type Designator: SQ7415AENW
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 53
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 16
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 25.5
nC
trⓘ - Rise Time: 9
nS
Cossⓘ -
Output Capacitance: 132
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065
Ohm
Package: POWERPAK1212-8W
SQ7415AENW
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SQ7415AENW
Datasheet (PDF)
..1. Size:180K vishay
sq7415aenw.pdf 
SQ7415AENWwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -60 Low thermal resistance PowerPAK 1212-8WRDS(on) () at VGS = -10 V 0.065package with 1.07 mm profileRDS(on) () at VGS = -4.5 V 0.090 AEC-Q101 qualifiedID (A) -16 Wettable flank terminalsConfiguration Singl
5.1. Size:560K vishay
sq7415aen.pdf
SQ7415AENwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 60 PowerPAK PackageRDS(on) () at VGS = - 10 V 0.065- Low Thermal Resistance, RthJC RDS(on) () at VGS = - 4.5 V 0.090- Low 1.07 mm ProfileID (A) - 16 AEC-Q101 QualifieddConfiguration Single 100 % R
8.1. Size:550K vishay
sq7415en.pdf
SQ7415ENwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 60 PowerPAK PackageRDS(on) () at VGS = - 10 V 0.065- Low Thermal Resistance, RthJC RDS(on) () at VGS = - 4.5 V 0.110- Low 1.07 mm ProfileID (A) - 5.7 Fast SwitchingConfiguration Single AEC-Q101 Qualified
9.1. Size:614K vishay
sq7414aen.pdf
SQ7414AENwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 Low thermal resistance PowerPAK 1212-8 RDS(on) () at VGS = 10 V 0.026package with 1.07 mm profileRDS(on) () at VGS = 4.5 V 0.036 PWM optimizedID (A) 16 100 % Rg and UIS testedConfiguration Single AEC-
9.2. Size:229K vishay
sq7414cenw.pdf
SQ7414CENWwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPowerPAK 1212-8W Single TrenchFET power MOSFETDD8 Low thermal resistance PowerPAK 1212-8 DD77DD66package with 1.07 mm profile55 PWM optimized 100 % Rg and UIS tested AEC-Q101 qualified1122 Wettable flank terminalsSS3
9.3. Size:210K vishay
sq7414aenw.pdf
SQ7414AENWwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 Low thermal resistance PowerPAK 1212-8 RDS(on) () at VGS = 10 V 0.023package with 1.07 mm profileRDS(on) () at VGS = 4.5 V 0.028 PWM optimizedID (A) 18 100 % Rg and UIS testedConfiguration Single AEC
9.4. Size:547K vishay
sq7414en.pdf
SQ7414ENwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 Low Thermal Resistance PowerPAK 1212-8 RDS(on) () at VGS = 10 V 0.025Package with 1.07 mm ProfileRDS(on) () at VGS = 4.5 V 0.036 PWM OptimizedID (A) 5.6 AEC-Q101 QualifiedConfiguration Single 100 % R
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