SQ9407EY Specs and Replacement
Type Designator: SQ9407EY
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.6 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm
Package: SO-8
SQ9407EY substitution
- MOSFET ⓘ Cross-Reference Search
SQ9407EY datasheet
sq9407ey.pdf
SQ9407EY www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 C MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) - 60 TrenchFET Power MOSFET RDS(on) ( ) at VGS = - 10 V 0.085 AEC-Q101 Qualifiedc RDS(on) ( ) at VGS = - 4.5 V 0.115 100 % Rg and UIS Tested ID (A) - 4.6 Compliant to RoHS Directive 2... See More ⇒
sq9407ey-t1.pdf
SQ9407EY-T1 www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -60 100 % Rg and UIS tested RDS(on) ( ) at VGS = -10 V 0.050 RDS(on) ( ) at VGS = -4.5 V 0.060 ID (A) per leg -8 S SO-8 S 1 8 D G S D 2 7 S 3 6 D G D 4 5 D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARA... See More ⇒
Detailed specifications: SQ4961EY, SQ7002K, SQ7414AEN, SQ7414AENW, SQ7414EN, SQ7415AEN, SQ7415AENW, SQ7415EN, IRF530, SQ9945BEY, SQA410EJ, SQD07N25-350H, SQD100N03-3M2L, SQD100N03-3M4, SQD100N04-3M6, SQD100N04-3M6L, SQD10N30-330H
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