SQA410EJ Specs and Replacement

Type Designator: SQA410EJ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 13.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 7.8 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: SC70-6L

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SQA410EJ datasheet

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SQA410EJ

SQA410EJ www.vishay.com Vishay Siliconix Automotive N-Channel 20 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 20 Definition RDS(on) ( ) at VGS = 4.5 V 0.028 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 2.5 V 0.034 AEC-Q101 Qualified d RDS(on) ( ) at VGS = 1.8 V 0.038 100 % Rg and UIS Tested ID (A) 7.8 ... See More ⇒

Detailed specifications: SQ7414AEN, SQ7414AENW, SQ7414EN, SQ7415AEN, SQ7415AENW, SQ7415EN, SQ9407EY, SQ9945BEY, NCEP15T14, SQD07N25-350H, SQD100N03-3M2L, SQD100N03-3M4, SQD100N04-3M6, SQD100N04-3M6L, SQD10N30-330H, SQD15N06-42L, SQD19P06-60L

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.