All MOSFET. SQA410EJ Datasheet

 

SQA410EJ MOSFET. Datasheet pdf. Equivalent


   Type Designator: SQA410EJ
   Marking Code: QA*
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 13.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1 V
   |Id|ⓘ - Maximum Drain Current: 7.8 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 5 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: SC70-6L

 SQA410EJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQA410EJ Datasheet (PDF)

 ..1. Size:201K  vishay
 sqa410ej.pdf

SQA410EJ SQA410EJ

SQA410EJwww.vishay.comVishay SiliconixAutomotive N-Channel 20 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 20DefinitionRDS(on) () at VGS = 4.5 V 0.028 TrenchFET Power MOSFETRDS(on) () at VGS = 2.5 V 0.034 AEC-Q101 Qualified dRDS(on) () at VGS = 1.8 V 0.038 100 % Rg and UIS TestedID (A) 7.8

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