SQD07N25-350H Specs and Replacement
Type Designator: SQD07N25-350H
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 71 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 88 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: TO-252
SQD07N25-350H substitution
- MOSFET ⓘ Cross-Reference Search
SQD07N25-350H datasheet
sqd07n25-350h.pdf
SQD07N25-350H www.vishay.com Vishay Siliconix Automotive N-Channel 250 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 250 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.350 AEC-Q101 Qualifiedd ID (A) 7 100 % Rg and UIS Tested Configuration Single Material categorization D TO-252 For definitions of comp... See More ⇒
Detailed specifications: SQ7414AENW, SQ7414EN, SQ7415AEN, SQ7415AENW, SQ7415EN, SQ9407EY, SQ9945BEY, SQA410EJ, AON7506, SQD100N03-3M2L, SQD100N03-3M4, SQD100N04-3M6, SQD100N04-3M6L, SQD10N30-330H, SQD15N06-42L, SQD19P06-60L, SQD23N06-31L
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