All MOSFET. SQD07N25-350H Datasheet

 

SQD07N25-350H MOSFET. Datasheet pdf. Equivalent


   Type Designator: SQD07N25-350H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 71 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 19 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 88 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: TO-252

 SQD07N25-350H Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQD07N25-350H Datasheet (PDF)

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 sqd07n25-350h.pdf

SQD07N25-350H SQD07N25-350H

SQD07N25-350Hwww.vishay.comVishay SiliconixAutomotive N-Channel 250 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 250 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.350 AEC-Q101 QualifieddID (A) 7 100 % Rg and UIS TestedConfiguration Single Material categorization:DTO-252For definitions of comp

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