All MOSFET. SQD07N25-350H Datasheet

 

SQD07N25-350H Datasheet and Replacement


   Type Designator: SQD07N25-350H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 71 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 88 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: TO-252
 

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SQD07N25-350H Datasheet (PDF)

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SQD07N25-350H

SQD07N25-350Hwww.vishay.comVishay SiliconixAutomotive N-Channel 250 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 250 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.350 AEC-Q101 QualifieddID (A) 7 100 % Rg and UIS TestedConfiguration Single Material categorization:DTO-252For definitions of comp

Datasheet: SQ7414AENW , SQ7414EN , SQ7415AEN , SQ7415AENW , SQ7415EN , SQ9407EY , SQ9945BEY , SQA410EJ , IRFP250 , SQD100N03-3M2L , SQD100N03-3M4 , SQD100N04-3M6 , SQD100N04-3M6L , SQD10N30-330H , SQD15N06-42L , SQD19P06-60L , SQD23N06-31L .

History: BSZ035N03LS | SQD100N03-3M2L

Keywords - SQD07N25-350H MOSFET datasheet

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