All MOSFET. SQD100N04-3M6L Datasheet

 

SQD100N04-3M6L MOSFET. Datasheet pdf. Equivalent


   Type Designator: SQD100N04-3M6L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 85 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 560 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
   Package: TO-252

 SQD100N04-3M6L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQD100N04-3M6L Datasheet (PDF)

 ..1. Size:183K  vishay
 sqd100n04-3m6l.pdf

SQD100N04-3M6L SQD100N04-3M6L

SQD100N04-3m6Lwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 40 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.0036 100 % Rg and UIS testedRDS(on) () at VGS = 4.5 V 0.0042 AEC-Q101 qualified dID (A) 100Configuration Single Material categorization:

 1.1. Size:152K  vishay
 sqd100n04-3m6.pdf

SQD100N04-3M6L SQD100N04-3M6L

SQD100N04-3m6www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0036 100 % Rg and UIS TestedID (A) 100 AEC-Q101 QualifieddConfiguration Single Material categorization:TO-252For definitions of compli

 6.1. Size:153K  vishay
 sqd100n03-3m4.pdf

SQD100N04-3M6L SQD100N04-3M6L

SQD100N03-3m4www.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.0034 AEC-Q101 QualifieddID (A) 100 Material categorization:Configuration SingleFor definitions of compliance please see www.vishay.com/doc?99912 TO-2

 6.2. Size:152K  vishay
 sqd100n03-3m2l.pdf

SQD100N04-3M6L SQD100N04-3M6L

SQD100N03-3m2Lwww.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURES TrenchFET Power MOSFETPRODUCT SUMMARY 100 % Rg and UIS TestedVDS (V) 30 AEC-Q101 QualifieddRDS(on) () at VGS = 10 V 0.0032 Material categorization:RDS(on) () at VGS = 4.5 V 0.0039For definitions of compliance please seeID (A) 100www.vishay.com/doc?

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: TK15S04N1L

 

 
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