All MOSFET. SQD25N06-22L Datasheet

 

SQD25N06-22L Datasheet and Replacement


   Type Designator: SQD25N06-22L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 62 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 305 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO-252
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SQD25N06-22L Datasheet (PDF)

 ..1. Size:167K  vishay
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SQD25N06-22L

SQD25N06-22Lwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.022 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.033 Package with Low Thermal ResistanceID (A) 25 100 % Rg and UIS TestedConfiguration Single

 8.1. Size:147K  vishay
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SQD25N06-22L

SQD25N15-52Vishay SiliconixAutomotiveN-Channel 150 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 150DefinitionRDS(on) () at VGS = 10 V 0.052 TrenchFET Power MOSFETID (A) 25 Package with Low Thermal ResistanceConfiguration Single AEC-Q101 QualifieddDTO-252 Compliant to RoHS Directive 2002/95/EC

 8.2. Size:168K  vishay
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SQD25N06-22L

SQD25N15-52www.vishay.comVishay SiliconixAutomotive N-Channel 150 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 150 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.052 100 % Rg and UIS TestedID (A) 25 AEC-Q101 QualifiedConfiguration Single Material categorization:DTO-252For definitions of compli

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: MTEF1P15AV8 | IRLR024 | CED05N8 | BUZ84 | FDS8812NZ | AON6794 | BL10N70-A

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