All MOSFET. SQD30N05-20L Datasheet

 

SQD30N05-20L MOSFET. Datasheet pdf. Equivalent


   Type Designator: SQD30N05-20L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 12 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 203 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO-252

 SQD30N05-20L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQD30N05-20L Datasheet (PDF)

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 sqd30n05-20l.pdf

SQD30N05-20L SQD30N05-20L

SQD30N05-20Lwww.vishay.comVishay SiliconixAutomotive N-Channel 55 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 55 AEC-Q101 QualifieddRDS(on) () at VGS = 10 V 0.020 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.026 Material categorization:ID (A) 30For definitions of compliance please see Configuration Single

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: CHM4301JGP

 

 
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