All MOSFET. SQD30N05-20L Datasheet

 

SQD30N05-20L Datasheet and Replacement


   Type Designator: SQD30N05-20L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 203 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO-252
 

 SQD30N05-20L substitution

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SQD30N05-20L Datasheet (PDF)

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SQD30N05-20L

SQD30N05-20Lwww.vishay.comVishay SiliconixAutomotive N-Channel 55 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 55 AEC-Q101 QualifieddRDS(on) () at VGS = 10 V 0.020 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.026 Material categorization:ID (A) 30For definitions of compliance please see Configuration Single

Datasheet: SQD100N04-3M6 , SQD100N04-3M6L , SQD10N30-330H , SQD15N06-42L , SQD19P06-60L , SQD23N06-31L , SQD25N06-22L , SQD25N15-52 , 13N50 , SQD35N05-26L , SQD40N04-10A , SQD40N06-14L , SQD40N10-25 , SQD40P10-40L , SQD45P03-12 , SQD50N02-04L , SQD50N03-06P .

Keywords - SQD30N05-20L MOSFET datasheet

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