SQD30N05-20L Specs and Replacement

Type Designator: SQD30N05-20L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 203 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: TO-252

SQD30N05-20L substitution

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SQD30N05-20L datasheet

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SQD30N05-20L

SQD30N05-20L www.vishay.com Vishay Siliconix Automotive N-Channel 55 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 55 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = 10 V 0.020 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.026 Material categorization ID (A) 30 For definitions of compliance please see Configuration Single... See More ⇒

Detailed specifications: SQD100N04-3M6, SQD100N04-3M6L, SQD10N30-330H, SQD15N06-42L, SQD19P06-60L, SQD23N06-31L, SQD25N06-22L, SQD25N15-52, 5N60, SQD35N05-26L, SQD40N04-10A, SQD40N06-14L, SQD40N10-25, SQD40P10-40L, SQD45P03-12, SQD50N02-04L, SQD50N03-06P

Keywords - SQD30N05-20L MOSFET specs

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