All MOSFET. SQD35N05-26L Datasheet

 

SQD35N05-26L Datasheet and Replacement


   Type Designator: SQD35N05-26L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 12 nC
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 203 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO-252
 

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SQD35N05-26L Datasheet (PDF)

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SQD35N05-26L

SQD35N05-26Lwww.vishay.comVishay SiliconixAutomotive N-Channel 55 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 55DefinitionRDS(on) () at VGS = 10 V 0.020 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.026 100 % Rg and UIS TestedID (A) 30 AEC-Q101 QualifieddConfiguration Single Compliant to

Datasheet: SQD100N04-3M6L , SQD10N30-330H , SQD15N06-42L , SQD19P06-60L , SQD23N06-31L , SQD25N06-22L , SQD25N15-52 , SQD30N05-20L , SKD502T , SQD40N04-10A , SQD40N06-14L , SQD40N10-25 , SQD40P10-40L , SQD45P03-12 , SQD50N02-04L , SQD50N03-06P , SQD50N03-09 .

Keywords - SQD35N05-26L MOSFET datasheet

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