All MOSFET. SQD35N05-26L Datasheet

 

SQD35N05-26L Datasheet and Replacement


   Type Designator: SQD35N05-26L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 203 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO-252
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SQD35N05-26L Datasheet (PDF)

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SQD35N05-26L

SQD35N05-26Lwww.vishay.comVishay SiliconixAutomotive N-Channel 55 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 55DefinitionRDS(on) () at VGS = 10 V 0.020 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.026 100 % Rg and UIS TestedID (A) 30 AEC-Q101 QualifieddConfiguration Single Compliant to

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: NCEP02503S | HLML6401 | AON6508 | APQ25SN06AA | STP20N06FI | MTH15N40 | CS50N20ANH

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