SQD35N05-26L MOSFET. Datasheet pdf. Equivalent
Type Designator: SQD35N05-26L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 30 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 12 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 203 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: TO-252
SQD35N05-26L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SQD35N05-26L Datasheet (PDF)
..1. Size:169K vishay
sqd35n05-26l.pdf
sqd35n05-26l.pdf
SQD35N05-26Lwww.vishay.comVishay SiliconixAutomotive N-Channel 55 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 55DefinitionRDS(on) () at VGS = 10 V 0.020 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.026 100 % Rg and UIS TestedID (A) 30 AEC-Q101 QualifieddConfiguration Single Compliant to
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