SQD40N10-25 Specs and Replacement

Type Designator: SQD40N10-25

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 136 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 312 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: TO-252

SQD40N10-25 substitution

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SQD40N10-25 datasheet

 ..1. Size:172K  vishay
 sqd40n10-25.pdf pdf_icon

SQD40N10-25

SQD40N10-25 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 100 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.025 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.029 AEC-Q101 Qualified ID (A) 40 Material categorization Configuration Single ... See More ⇒

 8.1. Size:170K  vishay
 sqd40n06-14l.pdf pdf_icon

SQD40N10-25

SQD40N06-14L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 60 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.014 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = 4.5 V 0.017 100 % Rg and UIS Tested ID (A) 40 Material categorization Configuration Single ... See More ⇒

 8.2. Size:167K  vishay
 sqd40n04-10a.pdf pdf_icon

SQD40N10-25

SQD40N04-10A www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 40 Definition RDS(on) ( ) at VGS = 10 V 0.010 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.014 Package with Low Thermal Resistance ID (A) 42 100 % Rg and UIS Tested Configuration Single ... See More ⇒

 8.3. Size:151K  vishay
 sqd40n04.pdf pdf_icon

SQD40N10-25

SQD40N04-10A Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 40 Definition RDS(on) ( ) at VGS = 10 V 0.010 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.014 Package with Low Thermal Resistance ID (A) 42 AEC-Q101 Qualifiedd Configuration Single Compliant to Ro... See More ⇒

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Detailed specifications: SQD19P06-60L, SQD23N06-31L, SQD25N06-22L, SQD25N15-52, SQD30N05-20L, SQD35N05-26L, SQD40N04-10A, SQD40N06-14L, 18N50, SQD40P10-40L, SQD45P03-12, SQD50N02-04L, SQD50N03-06P, SQD50N03-09, SQD50N03-4M0L, SQD50N04-09H, SQD50N04-3M5L

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.