All MOSFET. SQD40N10-25 Datasheet

 

SQD40N10-25 Datasheet and Replacement


   Type Designator: SQD40N10-25
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 46 nC
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 312 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO-252
 

 SQD40N10-25 substitution

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SQD40N10-25 Datasheet (PDF)

 ..1. Size:172K  vishay
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SQD40N10-25

SQD40N10-25www.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 100 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.025 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.029 AEC-Q101 QualifiedID (A) 40 Material categorization:Configuration Single

 8.1. Size:170K  vishay
sqd40n06-14l.pdf pdf_icon

SQD40N10-25

SQD40N06-14Lwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.014 AEC-Q101 QualifieddRDS(on) () at VGS = 4.5 V 0.017 100 % Rg and UIS TestedID (A) 40 Material categorization:Configuration Single

 8.2. Size:167K  vishay
sqd40n04-10a.pdf pdf_icon

SQD40N10-25

SQD40N04-10Awww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.010 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.014 Package with Low Thermal ResistanceID (A) 42 100 % Rg and UIS TestedConfiguration Single

 8.3. Size:151K  vishay
sqd40n04.pdf pdf_icon

SQD40N10-25

SQD40N04-10AVishay SiliconixAutomotiveN-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.010 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.014 Package with Low Thermal ResistanceID (A) 42 AEC-Q101 QualifieddConfiguration Single Compliant to Ro

Datasheet: SQD19P06-60L , SQD23N06-31L , SQD25N06-22L , SQD25N15-52 , SQD30N05-20L , SQD35N05-26L , SQD40N04-10A , SQD40N06-14L , 75N75 , SQD40P10-40L , SQD45P03-12 , SQD50N02-04L , SQD50N03-06P , SQD50N03-09 , SQD50N03-4M0L , SQD50N04-09H , SQD50N04-3M5L .

Keywords - SQD40N10-25 MOSFET datasheet

 SQD40N10-25 cross reference
 SQD40N10-25 equivalent finder
 SQD40N10-25 lookup
 SQD40N10-25 substitution
 SQD40N10-25 replacement

 

 
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