All MOSFET. SQD50N04-4M5L Datasheet

 

SQD50N04-4M5L Datasheet and Replacement


   Type Designator: SQD50N04-4M5L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 560 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: TO-252
 

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SQD50N04-4M5L Datasheet (PDF)

 ..1. Size:167K  vishay
sqd50n04-4m5l.pdf pdf_icon

SQD50N04-4M5L

SQD50N04-4m5Lwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0035 AEC-Q101 QualifiedRDS(on) () at VGS = 4.5 V 0.0042 100 % Rg and UIS TestedID (A) 50 Material categorization:Configuration Single

 3.1. Size:170K  vishay
sqd50n04-4m1.pdf pdf_icon

SQD50N04-4M5L

SQD50N04-4m1www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0041 AEC-Q101 QualifieddID (A) 50 100 % Rg and UIS TestedConfiguration Single Material categorization:For definitions of compliance please s

 5.1. Size:166K  vishay
sqd50n04-09h.pdf pdf_icon

SQD50N04-4M5L

SQD50N04-09Hwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.009 TrenchFET Power MOSFETID (A) 50 Package with Low Thermal ResistanceConfiguration Single 100 % Rg and UIS TestedD AEC-Q101 QualifieddTO-252

 5.2. Size:158K  vishay
sqd50n04-5m6.pdf pdf_icon

SQD50N04-4M5L

SQD50N04-5m6www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0056 AEC-Q101 QualifiedID (A) 50 100 % Rg and UIS Tested Material categorization:Configuration SingleFor definitions of compliance please se

Datasheet: SQD45P03-12 , SQD50N02-04L , SQD50N03-06P , SQD50N03-09 , SQD50N03-4M0L , SQD50N04-09H , SQD50N04-3M5L , SQD50N04-4M1 , RU6888R , SQD50N04-5M0 , SQD50N04-5M6 , SQD50N05-11L , SQD50N06-07L , SQD50N06-09L , SQD50N10-8M9L , SQD50N30-4M0L , SQD50P03-07 .

History: SQD50N04-5M0

Keywords - SQD50N04-4M5L MOSFET datasheet

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