All MOSFET. SQD50P04-09L Datasheet

 

SQD50P04-09L Datasheet and Replacement


   Type Designator: SQD50P04-09L
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 852 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0094 Ohm
   Package: TO-252
 

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SQD50P04-09L Datasheet (PDF)

 ..1. Size:169K  vishay
 sqd50p04-09l.pdf pdf_icon

SQD50P04-09L

SQD50P04-09Lwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 40DefinitionRDS(on) () at VGS = - 10 V 0.0094 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.0190 Package with Low Thermal ResistanceID (A) - 50 100 % Rg and UIS TestedConfiguratio

 5.1. Size:167K  vishay
 sqd50p04-13l.pdf pdf_icon

SQD50P04-09L

SQD50P04-13Lwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 40DefinitionRDS(on) () at VGS = - 10 V 0.013 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.022 Package with Low Thermal ResistanceID (A) - 50 100 % Rg and UIS TestedConfiguration

 7.1. Size:163K  vishay
 sqd50p06-15l.pdf pdf_icon

SQD50P04-09L

SQD50P06-15Lwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 60 Package with Low Thermal ResistanceRDS(on) () at VGS = - 10 V 0.0155 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.0200 AEC-Q101 QualifiedID (A) - 50 Material categorization:Configuration

 7.2. Size:177K  vishay
 sqd50p08-25l.pdf pdf_icon

SQD50P04-09L

SQD50P08-25Lwww.vishay.comVishay SiliconixAutomotive P-Channel 80 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 80 AEC-Q101 QualifieddRDS(on) () at VGS = - 10 V 0.025 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.031 Material categorization:ID (A) - 50For definitions of compliance please see Configuratio

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Datasheet: SQD50N04-5M0 , SQD50N04-5M6 , SQD50N05-11L , SQD50N06-07L , SQD50N06-09L , SQD50N10-8M9L , SQD50N30-4M0L , SQD50P03-07 , IRF9640 , SQD50P04-13L , SQD50P06-15L , SQD50P08-25L , SQD50P08-28 , SQD90P04-9M4L , SQD97N06-6M3L , SQJ401EP , SQJ402EP .

History: CED83A3G | NP80N06MLG

Keywords - SQD50P04-09L MOSFET datasheet

 SQD50P04-09L cross reference
 SQD50P04-09L equivalent finder
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