All MOSFET. SQD50P08-28 Datasheet

 

SQD50P08-28 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SQD50P08-28
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 48 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 343 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: TO-252

 SQD50P08-28 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQD50P08-28 Datasheet (PDF)

 ..1. Size:194K  vishay
 sqd50p08-28.pdf

SQD50P08-28 SQD50P08-28

SQD50P08-28Vishay SiliconixAutomotive P-Channel 80 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 80DefinitionRDS(on) () at VGS = - 10 V 0.028 TrenchFET Power MOSFETID (A) - 48 AEC-Q101 QualifieddConfiguration Single 100 % Rg and UIS TestedSTO-252 Compliant to RoHS Directive 2002/95/ECGDrain

 4.1. Size:177K  vishay
 sqd50p08-25l.pdf

SQD50P08-28 SQD50P08-28

SQD50P08-25Lwww.vishay.comVishay SiliconixAutomotive P-Channel 80 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 80 AEC-Q101 QualifieddRDS(on) () at VGS = - 10 V 0.025 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.031 Material categorization:ID (A) - 50For definitions of compliance please see Configuratio

 7.1. Size:163K  vishay
 sqd50p06-15l.pdf

SQD50P08-28 SQD50P08-28

SQD50P06-15Lwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 60 Package with Low Thermal ResistanceRDS(on) () at VGS = - 10 V 0.0155 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.0200 AEC-Q101 QualifiedID (A) - 50 Material categorization:Configuration

 7.2. Size:169K  vishay
 sqd50p04-09l.pdf

SQD50P08-28 SQD50P08-28

SQD50P04-09Lwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 40DefinitionRDS(on) () at VGS = - 10 V 0.0094 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.0190 Package with Low Thermal ResistanceID (A) - 50 100 % Rg and UIS TestedConfiguratio

 7.3. Size:170K  vishay
 sqd50p03-07.pdf

SQD50P08-28 SQD50P08-28

SQD50P03-07www.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 30 AEC-Q101 QualifieddRDS(on) () at VGS = - 10 V 0.007 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.011 Material categorization:ID (A) - 50For definitions of compliance please see Configuration

 7.4. Size:167K  vishay
 sqd50p04-13l.pdf

SQD50P08-28 SQD50P08-28

SQD50P04-13Lwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 40DefinitionRDS(on) () at VGS = - 10 V 0.013 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.022 Package with Low Thermal ResistanceID (A) - 50 100 % Rg and UIS TestedConfiguration

 7.5. Size:1409K  cn vbsemi
 sqd50p06-15l.pdf

SQD50P08-28 SQD50P08-28

SQD50P06-15Lwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Material categorization:0.020 at VGS = - 10 V - 50- 600.025 at VGS = - 4.5 V - 45APPLICATIONS Load SwitchTO-252SGDG SDTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Paramet

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top