All MOSFET. SQJ460AEP Datasheet

 

SQJ460AEP MOSFET. Datasheet pdf. Equivalent


   Type Designator: SQJ460AEP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 64 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 71 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 282 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0087 Ohm
   Package: POWERPAK-SO-8L

 SQJ460AEP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQJ460AEP Datasheet (PDF)

 ..1. Size:215K  vishay
 sqj460aep.pdf

SQJ460AEP SQJ460AEP

SQJ460AEPwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 AEC-Q101 qualified dRDS(on) () at VGS = 10 V 0.0087 Material categorization: RDS(on) () at VGS = 4.5 V 0.0094for definitions of compliance please see ID (A) 32 www.vishay.com/doc?99912 Configuration SinglePacka

 8.1. Size:182K  vishay
 sqj460ep.pdf

SQJ460AEP SQJ460AEP

SQJ460EPwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.0096 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.0120 AEC-Q101 QualifieddID (A) 32 100 % Rg and UIS TestedConfiguration Single Compliant to R

 9.1. Size:149K  vishay
 sqj461ep.pdf

SQJ460AEP SQJ460AEP

SQJ461EPwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 60DefinitionRDS(on) () at VGS = - 10 V 0.016 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.021 AEC-Q101 QualifieddID (A) - 30 100 % Rg and UIS TestedConfiguration Single Compliant

 9.2. Size:149K  vishay
 sqj463ep.pdf

SQJ460AEP SQJ460AEP

SQJ463EPwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) - 40 TrenchFET Power MOSFETRDS(on) () at VGS = - 10 V 0.010 AEC-Q101 QualifieddRDS(on) () at VGS = - 4.5 V 0.015 100 % Rg and UIS TestedID (A) - 30 Compliant to RoHS Directive 2002

 9.3. Size:147K  vishay
 sqj469ep.pdf

SQJ460AEP SQJ460AEP

SQJ469EPwww.vishay.comVishay SiliconixAutomotive P-Channel 80 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 80DefinitionRDS(on) () at VGS = - 10 V 0.025 TrenchFET Power MOSFETRDS(on) () at VGS = - 6 V 0.029 AEC-Q101 QualifieddID (A) - 32 100 % Rg and UIS TestedConfiguration Single Compliant to

 9.4. Size:180K  vishay
 sqj464ep.pdf

SQJ460AEP SQJ460AEP

SQJ464EPwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 AEC-Q101 QualifiedRDS(on) () at VGS = 10 V 0.017 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.020 Material categorization:ID (A) 24For definitions of compliance please see Configuration Singlewww

 9.5. Size:192K  vishay
 sqj465ep.pdf

SQJ460AEP SQJ460AEP

SQJ465EPwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) - 60 TrenchFET Power MOSFETRDS(on) () at VGS = - 10 V 0.085 AEC-Q101 QualifieddRDS(on) () at VGS = - 4.5 V 0.115 100 % Rg and UIS TestedID (A) - 8 Compliant to RoHS Directive 200

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: 2N7081

 

 
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