SQJ460AEP MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SQJ460AEP
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 83 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 64 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 71 nC
trⓘ - Время нарастания: 11 ns
Cossⓘ - Выходная емкость: 282 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0087 Ohm
Тип корпуса: POWERPAK-SO-8L
SQJ460AEP Datasheet (PDF)
sqj460aep.pdf
SQJ460AEPwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 AEC-Q101 qualified dRDS(on) () at VGS = 10 V 0.0087 Material categorization: RDS(on) () at VGS = 4.5 V 0.0094for definitions of compliance please see ID (A) 32 www.vishay.com/doc?99912 Configuration SinglePacka
sqj460ep.pdf
SQJ460EPwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.0096 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.0120 AEC-Q101 QualifieddID (A) 32 100 % Rg and UIS TestedConfiguration Single Compliant to R
sqj461ep.pdf
SQJ461EPwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 60DefinitionRDS(on) () at VGS = - 10 V 0.016 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.021 AEC-Q101 QualifieddID (A) - 30 100 % Rg and UIS TestedConfiguration Single Compliant
sqj463ep.pdf
SQJ463EPwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) - 40 TrenchFET Power MOSFETRDS(on) () at VGS = - 10 V 0.010 AEC-Q101 QualifieddRDS(on) () at VGS = - 4.5 V 0.015 100 % Rg and UIS TestedID (A) - 30 Compliant to RoHS Directive 2002
sqj469ep.pdf
SQJ469EPwww.vishay.comVishay SiliconixAutomotive P-Channel 80 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 80DefinitionRDS(on) () at VGS = - 10 V 0.025 TrenchFET Power MOSFETRDS(on) () at VGS = - 6 V 0.029 AEC-Q101 QualifieddID (A) - 32 100 % Rg and UIS TestedConfiguration Single Compliant to
sqj464ep.pdf
SQJ464EPwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 AEC-Q101 QualifiedRDS(on) () at VGS = 10 V 0.017 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.020 Material categorization:ID (A) 24For definitions of compliance please see Configuration Singlewww
sqj465ep.pdf
SQJ465EPwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) - 60 TrenchFET Power MOSFETRDS(on) () at VGS = - 10 V 0.085 AEC-Q101 QualifieddRDS(on) () at VGS = - 4.5 V 0.115 100 % Rg and UIS TestedID (A) - 8 Compliant to RoHS Directive 200
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918