SQJ840EP Specs and Replacement

Type Designator: SQJ840EP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 46 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 575 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0093 Ohm

Package: POWERPAK-SO-8L

SQJ840EP substitution

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SQJ840EP datasheet

 ..1. Size:147K  vishay
sqj840ep.pdf pdf_icon

SQJ840EP

SQJ840EP www.vishay.com Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 30 Definition RDS(on) ( ) at VGS = 10 V 0.0093 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.0138 AEC-Q101 Qualifiedd ID (A) 30 100 % Rg and UIS Tested Configuration Single Compliant to RoH... See More ⇒

 9.1. Size:220K  vishay
sqj844aep.pdf pdf_icon

SQJ840EP

SQJ844AEP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 30 AEC-Q101 qualified RDS(on) ( ) at VGS = 10 V 0.0166 100 % Rg and UIS tested RDS(on) ( ) at VGS = 4.5 V 0.0276 Material categorization ID (A) per leg 8 for definitions of compliance please Configuration Dual ... See More ⇒

 9.2. Size:178K  vishay
sqj848aep.pdf pdf_icon

SQJ840EP

SQJ848AEP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 40 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 10 V 0.0076 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = 4.5 V 0.0086 Material categorization ID (A) 24 For definitions of compliance please see Configuration Single www... See More ⇒

 9.3. Size:190K  vishay
sqj848ep.pdf pdf_icon

SQJ840EP

SQJ848EP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 40 AEC-Q101 Qualified RDS(on) ( ) at VGS = 10 V 0.0075 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.0120 Material categorization ID (A) 47 For definitions of compliance please see Configuration Single www.v... See More ⇒

Detailed specifications: SQJ460EP, SQJ461EP, SQJ463EP, SQJ465EP, SQJ469EP, SQJ486EP, SQJ488EP, SQJ500AEP, IRFB4110, SQJ844AEP, SQJ844EP, SQJ848AEP, SQJ848EP, SQJ850EP, SQJ858AEP, SQJ858EP, SQJ884EP

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