SQJ844AEP
MOSFET. Datasheet pdf. Equivalent
Type Designator: SQJ844AEP
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 48
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 8
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 17
nC
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 280
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0166
Ohm
Package: POWERPAK-SO-8L
SQJ844AEP
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SQJ844AEP
Datasheet (PDF)
..1. Size:220K vishay
sqj844aep.pdf 
SQJ844AEPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 30 AEC-Q101 qualifiedRDS(on) () at VGS = 10 V 0.0166 100 % Rg and UIS testedRDS(on) () at VGS = 4.5 V 0.0276 Material categorization:ID (A) per leg 8for definitions of compliance pleaseConfiguration Dual
8.1. Size:151K vishay
sqj844ep.pdf
SQJ844EPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 30DefinitionRDS(on) () at VGS = 10 V 0.024 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.037 AEC-Q101 QualifieddID (A) per leg 8 100 % Rg and UIS TestedConfiguration Dual Compliant
9.1. Size:178K vishay
sqj848aep.pdf
SQJ848AEPwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.0076 AEC-Q101 QualifieddRDS(on) () at VGS = 4.5 V 0.0086 Material categorization:ID (A) 24For definitions of compliance please seeConfiguration Singlewww
9.2. Size:190K vishay
sqj848ep.pdf
SQJ848EPwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 AEC-Q101 QualifiedRDS(on) () at VGS = 10 V 0.0075 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.0120 Material categorization:ID (A) 47For definitions of compliance please seeConfiguration Singlewww.v
9.3. Size:147K vishay
sqj840ep.pdf
SQJ840EPwww.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 30DefinitionRDS(on) () at VGS = 10 V 0.0093 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.0138 AEC-Q101 QualifieddID (A) 30 100 % Rg and UIS TestedConfiguration Single Compliant to RoH
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.
