All MOSFET. SQJ844AEP Datasheet

 

SQJ844AEP Datasheet and Replacement


   Type Designator: SQJ844AEP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0166 Ohm
   Package: POWERPAK-SO-8L
 

 SQJ844AEP substitution

   - MOSFET ⓘ Cross-Reference Search

 

SQJ844AEP Datasheet (PDF)

 ..1. Size:220K  vishay
 sqj844aep.pdf pdf_icon

SQJ844AEP

SQJ844AEPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 30 AEC-Q101 qualifiedRDS(on) () at VGS = 10 V 0.0166 100 % Rg and UIS testedRDS(on) () at VGS = 4.5 V 0.0276 Material categorization:ID (A) per leg 8for definitions of compliance pleaseConfiguration Dual

 8.1. Size:151K  vishay
 sqj844ep.pdf pdf_icon

SQJ844AEP

SQJ844EPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 30DefinitionRDS(on) () at VGS = 10 V 0.024 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.037 AEC-Q101 QualifieddID (A) per leg 8 100 % Rg and UIS TestedConfiguration Dual Compliant

 9.1. Size:178K  vishay
 sqj848aep.pdf pdf_icon

SQJ844AEP

SQJ848AEPwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.0076 AEC-Q101 QualifieddRDS(on) () at VGS = 4.5 V 0.0086 Material categorization:ID (A) 24For definitions of compliance please seeConfiguration Singlewww

 9.2. Size:190K  vishay
 sqj848ep.pdf pdf_icon

SQJ844AEP

SQJ848EPwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 AEC-Q101 QualifiedRDS(on) () at VGS = 10 V 0.0075 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.0120 Material categorization:ID (A) 47For definitions of compliance please seeConfiguration Singlewww.v

SHOW MORE

Datasheet: SQJ461EP , SQJ463EP , SQJ465EP , SQJ469EP , SQJ486EP , SQJ488EP , SQJ500AEP , SQJ840EP , IRF630 , SQJ844EP , SQJ848AEP , SQJ848EP , SQJ850EP , SQJ858AEP , SQJ858EP , SQJ884EP , SQJ886EP .

Keywords - SQJ844AEP MOSFET datasheet

 SQJ844AEP cross reference
 SQJ844AEP equivalent finder
 SQJ844AEP lookup
 SQJ844AEP substitution
 SQJ844AEP replacement

 

 
Back to Top

 


 
.