IXTH12N100 MOSFET Datasheet: N-Ch, 1000V, 12A. Full specification with pinout and replacement list

IXTH12N100 Specs and Replacement

Type Designator: IXTH12N100

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 310 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.05 Ohm

Package: TO247

IXTH12N100 substitution

- MOSFET ⓘ Cross-Reference Search

IXTH12N100 datasheet

..1. Size:105K ixys
ixth10n100 ixtm10n100 ixth12n100 ixtm12n100.pdf pdf_icon

VDSS ID25 RDS(on) MegaMOSTMFET IXTH / IXTM 10N100 1000 V 10 A 1.20 IXTH / IXTM 12N100 1000 V 12 A 1.05 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C 10N... See More ⇒

6.1. Size:175K ixys
ixtt12n150 ixth12n150.pdf pdf_icon

High Voltage VDSS = 1500V IXTT12N150 ID25 = 12A Power MOSFET IXTH12N150 RDS(on) 2.2 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 1500 V D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V VGSS Continuous 30 V TO-247 (IXTH) VG... See More ⇒

6.2. Size:122K ixys
ixth12n150 ixtt12n150.pdf pdf_icon

High Voltage VDSS = 1500V IXTT12N150 ID25 = 12A Power MOSFETs IXTH12N150 RDS(on) 2 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 1500 V D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V VGSS Continuous 30 V TO-247 (IXTH) VGSM Transient... See More ⇒

6.3. Size:545K ixys
ixth12n120.pdf pdf_icon

VDSS = 1200 V IXTH 12N120 ID (cont) = 12 A Power MOSFET, Avalanche Rated RDS(on)= 1.4 High Voltage Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C 1200 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1200 V VGS Continuous 30 V D (TAB) VGSM Transient 40 V ID25 TC = 25 C12 A IDM TC = 25 C, pulse width limit... See More ⇒

Detailed specifications: IXFX90N30 , IXTA1N100 , IXTA2N80 , IXTH10N100 , IXTH10N90 , IXTH10P50 , IXTH11N80 , IXTH11P50 , 7N60 , IXTH12N45MA , IXTH12N45MB , IXTH12N50A , IXTH12N50MA , IXTH12N50MB , IXTH12N90 , IXTH13N110 , IXTH13N80 .