SQJ886EP Specs and Replacement
Type Designator: SQJ886EP
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 356 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: POWERPAK-SO-8L
SQJ886EP substitution
- MOSFET ⓘ Cross-Reference Search
SQJ886EP datasheet
sqj886ep.pdf
SQJ886EP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 40 AEC-Q101 Qualifiedc RDS(on) ( ) at VGS = 10 V 0.0045 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.0055 Material categorization ID (A) 60 For definitions of compliance please see Configuration Single www.... See More ⇒
sqj884ep.pdf
SQJ884EP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 40 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = 10 V 0.006 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.008 Material categorization ID (A) 32 For definitions of compliance please see Configuration Single www.vi... See More ⇒
Detailed specifications: SQJ844AEP, SQJ844EP, SQJ848AEP, SQJ848EP, SQJ850EP, SQJ858AEP, SQJ858EP, SQJ884EP, 2N7000, SQJ910AEP, SQJ912AEP, SQJ912EP, SQJ940EP, SQJ941EP, SQJ942EP, SQJ951EP, SQJ952EP
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