SQJ910AEP
MOSFET. Datasheet pdf. Equivalent
Type Designator: SQJ910AEP
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 48
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 30
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 25.8
nC
trⓘ - Rise Time: 3
nS
Cossⓘ -
Output Capacitance: 313
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007
Ohm
Package: POWERPAK-SO-8L
SQJ910AEP
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SQJ910AEP
Datasheet (PDF)
..1. Size:167K vishay
sqj910aep.pdf 
SQJ910AEPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.007 AEC-Q101 QualifieddRDS(on) () at VGS = 4.5 V 0.0086 Material categorization:ID (A) per leg 30For definitions of compliance please see Configura
9.1. Size:269K vishay
sqj912bep.pdf
SQJ912BEPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 40 V (D-S) 175 C MOSFETFEATURESPowerPAK SO-8L Dual TrenchFET power MOSFET AEC-Q101 qualifiedD1 100 % Rg and UIS tested Material categorization:D2for definitions of compliance please see1S1 www.vishay.com/doc?999122G13S241 D11 G2D2Top View Bottom ViewPRODUCT SUMMARY
9.2. Size:175K vishay
sqj912ep.pdf
SQJ912EPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.014 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.015 100 % Rg and UIS TestedID (A) per leg 8 Compliant to RoHS Directive 2002/95/ECConfigurati
9.3. Size:265K vishay
sqj914ep.pdf
SQJ914EPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 30 V (D-S) 175 C MOSFETFEATURESPowerPAK SO-8L Dual TrenchFET power MOSFET AEC-Q101 qualifiedD1 100 % Rg and UIS tested Material categorization: D2for definitions of compliance please see 1S1www.vishay.com/doc?999122G13S24D1D21 G21Top View Bottom ViewPRODUCT SUMMA
9.4. Size:169K vishay
sqj912aep.pdf
SQJ912AEPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.0093 AEC-Q101 QualifieddRDS(on) () at VGS = 4.5 V 0.0111 Material categorization: ID (A) per leg 30For definitions of compliance please see Configu
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