All MOSFET. SQJ912EP Datasheet

 

SQJ912EP Datasheet and Replacement


   Type Designator: SQJ912EP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 31.5 nC
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 282 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: POWERPAK-SO-8L
 

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SQJ912EP Datasheet (PDF)

 ..1. Size:175K  vishay
sqj912ep.pdf pdf_icon

SQJ912EP

SQJ912EPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.014 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.015 100 % Rg and UIS TestedID (A) per leg 8 Compliant to RoHS Directive 2002/95/ECConfigurati

 8.1. Size:269K  vishay
sqj912bep.pdf pdf_icon

SQJ912EP

SQJ912BEPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 40 V (D-S) 175 C MOSFETFEATURESPowerPAK SO-8L Dual TrenchFET power MOSFET AEC-Q101 qualifiedD1 100 % Rg and UIS tested Material categorization:D2for definitions of compliance please see1S1 www.vishay.com/doc?999122G13S241 D11 G2D2Top View Bottom ViewPRODUCT SUMMARY

 8.2. Size:169K  vishay
sqj912aep.pdf pdf_icon

SQJ912EP

SQJ912AEPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.0093 AEC-Q101 QualifieddRDS(on) () at VGS = 4.5 V 0.0111 Material categorization: ID (A) per leg 30For definitions of compliance please see Configu

 9.1. Size:265K  vishay
sqj914ep.pdf pdf_icon

SQJ912EP

SQJ914EPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 30 V (D-S) 175 C MOSFETFEATURESPowerPAK SO-8L Dual TrenchFET power MOSFET AEC-Q101 qualifiedD1 100 % Rg and UIS tested Material categorization: D2for definitions of compliance please see 1S1www.vishay.com/doc?999122G13S24D1D21 G21Top View Bottom ViewPRODUCT SUMMA

Datasheet: SQJ848EP , SQJ850EP , SQJ858AEP , SQJ858EP , SQJ884EP , SQJ886EP , SQJ910AEP , SQJ912AEP , STP75NF75 , SQJ940EP , SQJ941EP , SQJ942EP , SQJ951EP , SQJ952EP , SQJ960EP , SQJ962EP , SQJ963EP .

History: 2SK3522N | AP2336GN-HF | 2SK2870-01L | US5U3 | SIHFIZ14G

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