All MOSFET. SQJ912EP Datasheet

 

SQJ912EP MOSFET. Datasheet pdf. Equivalent


   Type Designator: SQJ912EP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 31.5 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 282 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: POWERPAK-SO-8L

 SQJ912EP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQJ912EP Datasheet (PDF)

 ..1. Size:175K  vishay
 sqj912ep.pdf

SQJ912EP SQJ912EP

SQJ912EPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.014 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.015 100 % Rg and UIS TestedID (A) per leg 8 Compliant to RoHS Directive 2002/95/ECConfigurati

 8.1. Size:269K  vishay
 sqj912bep.pdf

SQJ912EP SQJ912EP

SQJ912BEPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 40 V (D-S) 175 C MOSFETFEATURESPowerPAK SO-8L Dual TrenchFET power MOSFET AEC-Q101 qualifiedD1 100 % Rg and UIS tested Material categorization:D2for definitions of compliance please see1S1 www.vishay.com/doc?999122G13S241 D11 G2D2Top View Bottom ViewPRODUCT SUMMARY

 8.2. Size:169K  vishay
 sqj912aep.pdf

SQJ912EP SQJ912EP

SQJ912AEPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.0093 AEC-Q101 QualifieddRDS(on) () at VGS = 4.5 V 0.0111 Material categorization: ID (A) per leg 30For definitions of compliance please see Configu

 9.1. Size:265K  vishay
 sqj914ep.pdf

SQJ912EP SQJ912EP

SQJ914EPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 30 V (D-S) 175 C MOSFETFEATURESPowerPAK SO-8L Dual TrenchFET power MOSFET AEC-Q101 qualifiedD1 100 % Rg and UIS tested Material categorization: D2for definitions of compliance please see 1S1www.vishay.com/doc?999122G13S24D1D21 G21Top View Bottom ViewPRODUCT SUMMA

 9.2. Size:167K  vishay
 sqj910aep.pdf

SQJ912EP SQJ912EP

SQJ910AEPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.007 AEC-Q101 QualifieddRDS(on) () at VGS = 4.5 V 0.0086 Material categorization:ID (A) per leg 30For definitions of compliance please see Configura

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