All MOSFET. SQJ970EP Datasheet

 

SQJ970EP Datasheet and Replacement


   Type Designator: SQJ970EP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: POWERPAK-SO-8L
 

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SQJ970EP Datasheet (PDF)

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SQJ970EP

SQJ970EPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.020 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.028 AEC-Q101 QualifieddID (A) per leg 8 100 % Rg and UIS TestedConfiguration Dual Compliant

Datasheet: SQJ942EP , SQJ951EP , SQJ952EP , SQJ960EP , SQJ962EP , SQJ963EP , SQJ964EP , SQJ968EP , AO3400 , SQJ980AEP , SQJ980EP , SQJ992EP , SQJQ402E , SQS400EN , SQS401EN , SQS404EN , SQS405EN .

History: AOSD26313C

Keywords - SQJ970EP MOSFET datasheet

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