All MOSFET. SQJ970EP Datasheet

 

SQJ970EP MOSFET. Datasheet pdf. Equivalent


   Type Designator: SQJ970EP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 34 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: POWERPAK-SO-8L

 SQJ970EP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQJ970EP Datasheet (PDF)

 ..1. Size:151K  vishay
sqj970ep.pdf

SQJ970EP
SQJ970EP

SQJ970EPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.020 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.028 AEC-Q101 QualifieddID (A) per leg 8 100 % Rg and UIS TestedConfiguration Dual Compliant

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IPF09N03LA | RJK0323JPD | STW20NK50Z

 

 
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