SQJQ402E Specs and Replacement
Type Designator: SQJQ402E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 200 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 1370 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm
Package: POWERPAK8X8L
SQJQ402E substitution
- MOSFET ⓘ Cross-Reference Search
SQJQ402E datasheet
sqjq402e.pdf
SQJQ402E www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 40 AEC-Q101 qualified RDS(on) ( ) at VGS = 10 V 0.0017 100 % Rg and UIS tested RDS(on) ( ) at VGS = 4.5 V 0.0020 Thin 1.9 mm height ID (A) 200 Configuration Single Material categorization for definitions of comp... See More ⇒
Detailed specifications: SQJ962EP, SQJ963EP, SQJ964EP, SQJ968EP, SQJ970EP, SQJ980AEP, SQJ980EP, SQJ992EP, SPP20N60C3, SQS400EN, SQS401EN, SQS404EN, SQS405EN, SQS405ENW, SQS420EN, SQS423EN, SQS460EN
Keywords - SQJQ402E MOSFET specs
SQJQ402E cross reference
SQJQ402E equivalent finder
SQJQ402E pdf lookup
SQJQ402E substitution
SQJQ402E replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
