All MOSFET. SQJQ402E Datasheet

 

SQJQ402E Datasheet and Replacement


   Type Designator: SQJQ402E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 200 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 1370 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm
   Package: POWERPAK8X8L
 

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SQJQ402E Datasheet (PDF)

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SQJQ402E

SQJQ402Ewww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 40 AEC-Q101 qualifiedRDS(on) () at VGS = 10 V 0.0017 100 % Rg and UIS testedRDS(on) () at VGS = 4.5 V 0.0020 Thin 1.9 mm heightID (A) 200Configuration Single Material categorization: for definitions of comp

Datasheet: SQJ962EP , SQJ963EP , SQJ964EP , SQJ968EP , SQJ970EP , SQJ980AEP , SQJ980EP , SQJ992EP , AON7410 , SQS400EN , SQS401EN , SQS404EN , SQS405EN , SQS405ENW , SQS420EN , SQS423EN , SQS460EN .

History: RJK0631JPR | 6N60KG-TA3-T | IPD80R2K7C3A | UPA1764G | S10H18RP | PV537BA | STD5NK50ZT4

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