SQS460EN Specs and Replacement

Type Designator: SQS460EN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 39 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 113 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm

Package: POWERPAK1212-8

SQS460EN substitution

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SQS460EN datasheet

 ..1. Size:561K  vishay
sqs460en.pdf pdf_icon

SQS460EN

SQS460EN www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 60 AEC-Q101 Qualified RDS(on) ( ) at VGS = 10 V 0.036 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.048 Material categorization ID (A) 8 For definitions of compliance please see Configuration Single www.vish... See More ⇒

 9.1. Size:560K  vishay
sqs462en.pdf pdf_icon

SQS460EN

SQS462EN www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 60 AEC-Q101 Qualified RDS(on) ( ) at VGS = 10 V 0.063 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.082 Material categorization ID (A) 8 For definitions of compliance please see Configuration Single www.... See More ⇒

 9.2. Size:558K  vishay
sqs466een.pdf pdf_icon

SQS460EN

SQS466EEN www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) ( ) at VGS = 10 V 0.048 Typical ESD Protection 800 Vg RDS(on) ( ) at VGS = 4.5 V 0.074 TrenchFET Power MOSFET ID (A) 8 AEC-Q101 Qualifiedd Configuration Single 100 % Rg a... See More ⇒

 9.3. Size:558K  vishay
sqs464een.pdf pdf_icon

SQS460EN

SQS464EEN www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 40 Definition RDS(on) ( ) at VGS = 10 V 0.032 Typical ESD Protection 800 V RDS(on) ( ) at VGS = 4.5 V 0.046 TrenchFET Power MOSFET ID (A) 8 AEC-Q101 Qualifiedd Configuration Single 100 % Rg an... See More ⇒

Detailed specifications: SQJQ402E, SQS400EN, SQS401EN, SQS404EN, SQS405EN, SQS405ENW, SQS420EN, SQS423EN, IRFB3607, SQS462EN, SQS464EEN, SQS466EEN, SQS482EN, SQS484EN, SQS840EN, SQS850EN, SQV120N10-3M8

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.