All MOSFET. SQS482EN Datasheet

 

SQS482EN MOSFET. Datasheet pdf. Equivalent

Type Designator: SQS482EN

SMD Transistor Code: Q017

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 62 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 16 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 26 nC

Rise Time (tr): 21 nS

Drain-Source Capacitance (Cd): 280 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0085 Ohm

Package: PowerPAK1212-8

SQS482EN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQS482EN Datasheet (PDF)

1.1. sqs482en.pdf Size:560K _update

SQS482EN
SQS482EN

SQS482EN www.vishay.com Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) 30 • AEC-Q101 Qualifiedd RDS(on) () at VGS = 10 V 0.0085 • 100 % Rg and UIS Tested RDS(on) () at VGS = 4.5 V 0.01 • Material categorization: ID (A) 16 For definitions of compliance please see Configuration Single www.vi

5.1. sqs484en.pdf Size:561K _update

SQS482EN
SQS482EN

SQS484EN www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) 40 • AEC-Q101 Qualifiedd RDS(on) () at VGS = 10 V 0.009 • 100 % Rg and UIS Tested RDS(on) () at VGS = 4.5 V 0.01 • Material categorization: ID (A) 16 For definitions of compliance please see Configuration Single www.vis

Datasheet: PHB95NQ04LT , PHB96NQ03LT , PHD108NQ03LT , PHD14NQ20T , PHD16N03LT , PHD16N03T , PHD18NQ10T , PHD21N06LT , IRFP250 , PHD23NQ10T , PHD34NQ10T , PHD36N03LT , PHD37N06LT , PHD44N06LT , PHD50N06LT , PHD66NQ03LT , PHD77NQ03T .

 
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