SQV120N10-3M8 MOSFET. Datasheet pdf. Equivalent
Type Designator: SQV120N10-3M8
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 250 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
Maximum Drain Current |Id|: 120 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 125 nC
Rise Time (tr): 110 nS
Drain-Source Capacitance (Cd): 3070 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0038 Ohm
Package: TO-262
SQV120N10-3M8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SQV120N10-3M8 Datasheet (PDF)
1.1. sqv120n10-3m8.pdf 
Size:124K _update
SQV120N10-3m8 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) 100 • Package with Low Thermal Resistance RDS(on) () at VGS = 10 V 0.0038 • AEC-Q101 Qualifiedd ID (A) 120 • 100 % Rg and UIS Tested Configuration Single • Material categorization: TO-262 D For definitions of comp
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