SQV120N10-3M8 Specs and Replacement

Type Designator: SQV120N10-3M8

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 110 nS

Cossⓘ - Output Capacitance: 3070 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm

Package: TO-262

SQV120N10-3M8 substitution

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SQV120N10-3M8 datasheet

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SQV120N10-3M8

SQV120N10-3m8 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 100 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.0038 AEC-Q101 Qualifiedd ID (A) 120 100 % Rg and UIS Tested Configuration Single Material categorization TO-262 D For definitions of comp... See More ⇒

Detailed specifications: SQS460EN, SQS462EN, SQS464EEN, SQS466EEN, SQS482EN, SQS484EN, SQS840EN, SQS850EN, TK10A60D, SQV90N06-05, SRADM1002, SRADM1003, SRADM1004, SRADM1005, SRADM1006, SRADM1007, SRADM1008

Keywords - SQV120N10-3M8 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.