All MOSFET. SQV120N10-3M8 Datasheet

 

SQV120N10-3M8 MOSFET. Datasheet pdf. Equivalent

Type Designator: SQV120N10-3M8

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 250 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V

Maximum Drain Current |Id|: 120 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 125 nC

Rise Time (tr): 110 nS

Drain-Source Capacitance (Cd): 3070 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0038 Ohm

Package: TO-262

SQV120N10-3M8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQV120N10-3M8 Datasheet (PDF)

1.1. sqv120n10-3m8.pdf Size:124K _update

SQV120N10-3M8 SQV120N10-3M8

SQV120N10-3m8 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) 100 • Package with Low Thermal Resistance RDS(on) () at VGS = 10 V 0.0038 • AEC-Q101 Qualifiedd ID (A) 120 • 100 % Rg and UIS Tested Configuration Single • Material categorization: TO-262 D For definitions of comp

Datasheet: SQS460EN , SQS462EN , SQS464EEN , SQS466EEN , SQS482EN , SQS484EN , SQS840EN , SQS850EN , 2SK170 , SQV90N06-05 , SRADM1002 , SRADM1003 , SRADM1004 , SRADM1005 , SRADM1006 , SRADM1007 , SRADM1008 .

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