All MOSFET. SQV120N10-3M8 Datasheet

 

SQV120N10-3M8 Datasheet and Replacement


   Type Designator: SQV120N10-3M8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 110 nS
   Cossⓘ - Output Capacitance: 3070 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
   Package: TO-262
 

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SQV120N10-3M8 Datasheet (PDF)

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SQV120N10-3M8

SQV120N10-3m8www.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 100 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0038 AEC-Q101 QualifieddID (A) 120 100 % Rg and UIS TestedConfiguration Single Material categorization:TO-262DFor definitions of comp

Datasheet: SQS460EN , SQS462EN , SQS464EEN , SQS466EEN , SQS482EN , SQS484EN , SQS840EN , SQS850EN , IRFZ24N , SQV90N06-05 , SRADM1002 , SRADM1003 , SRADM1004 , SRADM1005 , SRADM1006 , SRADM1007 , SRADM1008 .

History: VN4012L

Keywords - SQV120N10-3M8 MOSFET datasheet

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