SQV90N06-05 Specs and Replacement

Type Designator: SQV90N06-05

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 830 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: TO-262

SQV90N06-05 substitution

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SQV90N06-05 datasheet

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SQV90N06-05

SQV90N06-05 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) 60 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 10 V 0.005 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 4.5 V 0.007 AEC-Q101 Qualifiedd ID (A) 90 100 % Rg and UIS Tested... See More ⇒

Detailed specifications: SQS462EN, SQS464EEN, SQS466EEN, SQS482EN, SQS484EN, SQS840EN, SQS850EN, SQV120N10-3M8, AO4407, SRADM1002, SRADM1003, SRADM1004, SRADM1005, SRADM1006, SRADM1007, SRADM1008, SRC11N65TC

Keywords - SQV90N06-05 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs