All MOSFET. SQV90N06-05 Datasheet

 

SQV90N06-05 Datasheet and Replacement


   Type Designator: SQV90N06-05
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 830 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO-262
 

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SQV90N06-05 Datasheet (PDF)

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SQV90N06-05

SQV90N06-05www.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) 60 TrenchFET Power MOSFETRDS(on) () at VGS = 10 V 0.005 Package with Low Thermal ResistanceRDS(on) () at VGS = 4.5 V 0.007 AEC-Q101 QualifieddID (A) 90 100 % Rg and UIS Tested

Datasheet: SQS462EN , SQS464EEN , SQS466EEN , SQS482EN , SQS484EN , SQS840EN , SQS850EN , SQV120N10-3M8 , P60NF06 , SRADM1002 , SRADM1003 , SRADM1004 , SRADM1005 , SRADM1006 , SRADM1007 , SRADM1008 , SRC11N65TC .

History: WMQ25P03T1

Keywords - SQV90N06-05 MOSFET datasheet

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