IXTH12N50MA Specs and Replacement
Type Designator: IXTH12N50MA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO247
IXTH12N50MA substitution
IXTH12N50MA datasheet
ixth12n45ma ixth12n45mb ixth12n50ma ixth12n50mb ixth15n35ma ixth15n35mb ixth15n40ma ixth15n40mb ixtz42n20mb ixtz67n10ma ixtz67n10mb.pdf
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ixth12n50a ixtm12n50a.pdf
VDSS ID25 RDS(on) Standard IXTH 12 N50A 500 V 12 A 0.4 Power MOSFET IXTM 12 N50A 500 V 12 A 0.4 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V D (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C12 A IDM TC ... See More ⇒
ixtt12n150 ixth12n150.pdf
High Voltage VDSS = 1500V IXTT12N150 ID25 = 12A Power MOSFET IXTH12N150 RDS(on) 2.2 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 1500 V D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V VGSS Continuous 30 V TO-247 (IXTH) VG... See More ⇒
Detailed specifications: IXTH10N90 , IXTH10P50 , IXTH11N80 , IXTH11P50 , IXTH12N100 , IXTH12N45MA , IXTH12N45MB , IXTH12N50A , IRLB3034 , IXTH12N50MB , IXTH12N90 , IXTH13N110 , IXTH13N80 , IXTH14N100 , IXTH14N80 , IXTH15N35MA , IXTH15N35MB .
Keywords - IXTH12N50MA MOSFET specs
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