All MOSFET. SRADM1008 Datasheet

 

SRADM1008 Datasheet and Replacement


   Type Designator: SRADM1008
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: TO-257
 

 SRADM1008 substitution

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SRADM1008 Datasheet (PDF)

 ..1. Size:136K  sensitron
sradm1008.pdf pdf_icon

SRADM1008

SRADM1008 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5406, REV. - HERMETIC RAD HARD POWER MOSFET FEATURES: Low RDS(on) Single Event Effect (SEE) hardened, o LET 85, Range: 118m VGS = -10V, VDS = 250V VGS = -15V, VDS = 120V o LET 55, Range: 90m VGS = -15V, VDS = 250V VGS = -20V, VDS = 160V Total Ionization Dose (TID) hardened

 6.1. Size:143K  sensitron
sradm1007.pdf pdf_icon

SRADM1008

SENSITRON SRADM1007 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5405, REV. - HERMETIC RAD HARD POWER MOSFET FEATURES: Low RDS(on) Single Event Effect (SEE) hardened, o LET 55, Range: 90m VGS = -20V, VDS = 100V Total Ionization Dose (TID) hardened, 100kRad Surface mount SMD-0.5 package Near equivalent to IRHNJ7130 MAXIMUM RATINGS ALL RATINGS AR

 6.2. Size:151K  sensitron
sradm1004.pdf pdf_icon

SRADM1008

SENSITRON SRADM1004 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5399, REV. - HERMETIC RAD HARD POWER MOSFET FEATURES: Low RDS(on) Single Event Effect (SEE) hardened, LET 55, Range: 90m o VGS = -15V, VDS = 250V o VGS = -20V, VDS = 160V Total Ionization Dose (TID) hardened, 100kRad Surface mount SMD-2 package Near equivalent to IRHNA67260 MAXIMUM RAT

 6.3. Size:143K  sensitron
sradm1005.pdf pdf_icon

SRADM1008

SRADM1005 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5403, REV. - HERMETIC RAD HARD POWER MOSFET FEATURES: Low RDS(on) Single Event Effect (SEE) hardened, o LET 85, Range: 118m VGS = -10V, VDS = 250V VGS = -15V, VDS = 120V o LET 55, Range: 90m VGS = -15V, VDS = 250V VGS = -20V, VDS = 160V Total Ionization Dose (TID) hardened,

Datasheet: SQV120N10-3M8 , SQV90N06-05 , SRADM1002 , SRADM1003 , SRADM1004 , SRADM1005 , SRADM1006 , SRADM1007 , 13N50 , SRC11N65TC , SRC11N65TF , SRC4N65D1 , SRC4N65DTR , SRC4N65TC , SRC4N65TF , SRC7N65D1 , SRC7N65DTR .

History: R5011ANJ | AFP8995 | HAT2280R | BL12N65-P | IRFPE32 | SFF60P05Z | MTM76325

Keywords - SRADM1008 MOSFET datasheet

 SRADM1008 cross reference
 SRADM1008 equivalent finder
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 SRADM1008 replacement

 

 
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