SRC11N65TF Specs and Replacement

Type Designator: SRC11N65TF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14.1 nS

Cossⓘ - Output Capacitance: 782 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.348 Ohm

Package: TO-220F

SRC11N65TF substitution

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SRC11N65TF datasheet

 6.1. Size:468K  sanrise-tech
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SRC11N65TF

Datasheet 11A, 650V, Super Junction N-Channel Power MOSFET SRC11N65 General Description Symbol The Sanrise SRC11N65 is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance and fast switching time, making it especially suitable for applications which require superior power density and outstanding ef... See More ⇒

Detailed specifications: SRADM1002, SRADM1003, SRADM1004, SRADM1005, SRADM1006, SRADM1007, SRADM1008, SRC11N65TC, SI2302, SRC4N65D1, SRC4N65DTR, SRC4N65TC, SRC4N65TF, SRC7N65D1, SRC7N65DTR, SRC7N65TC, SRC7N65TF

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