All MOSFET. SRC4N65TF Datasheet

 

SRC4N65TF MOSFET. Datasheet pdf. Equivalent


   Type Designator: SRC4N65TF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 27.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.49 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13.2 nC
   trⓘ - Rise Time: 11.8 nS
   Cossⓘ - Output Capacitance: 298 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.935 Ohm
   Package: TO-220F

 SRC4N65TF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SRC4N65TF Datasheet (PDF)

 7.1. Size:511K  sanrise-tech
 src4n65.pdf

SRC4N65TF SRC4N65TF

Datasheet 4A, 650V, Super Junction N-Channel Power MOSFET SRC4N65General Description Symbol The Sanrise SRC4N65 is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance and fast switching time, making it especially suitable forapplications which require superior power density and outstanding effic

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History: BUK6240-75C | BUK452-100A | FIR12N70FG | BRCS020N04BD

 

 
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