SRC7N65D1 Specs and Replacement

Type Designator: SRC7N65D1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 69.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13.1 nS

Cossⓘ - Output Capacitance: 474 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.572 Ohm

Package: TO-251

SRC7N65D1 substitution

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SRC7N65D1 datasheet

 7.1. Size:512K  sanrise-tech
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SRC7N65D1

Datasheet 7A, 650V, Super Junction N-Channel Power MOSFET SRC7N65 General Description Symbol The Sanrise SRC7N65 is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance and fast switching time, making it especially suitable for applications which require superior power density and outstanding effic... See More ⇒

Detailed specifications: SRADM1007, SRADM1008, SRC11N65TC, SRC11N65TF, SRC4N65D1, SRC4N65DTR, SRC4N65TC, SRC4N65TF, IRF2807, SRC7N65DTR, SRC7N65TC, SRC7N65TF, SRK7002LT1G, SRM10N60TF, SRM10N60TC, SRM10N65TF, SRM10N65TC

Keywords - SRC7N65D1 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.