SRC7N65TC Specs and Replacement

Type Designator: SRC7N65TC

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13.1 nS

Cossⓘ - Output Capacitance: 474 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.572 Ohm

Package: TO-220C

SRC7N65TC substitution

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SRC7N65TC datasheet

 7.1. Size:512K  sanrise-tech
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SRC7N65TC

Datasheet 7A, 650V, Super Junction N-Channel Power MOSFET SRC7N65 General Description Symbol The Sanrise SRC7N65 is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance and fast switching time, making it especially suitable for applications which require superior power density and outstanding effic... See More ⇒

Detailed specifications: SRC11N65TC, SRC11N65TF, SRC4N65D1, SRC4N65DTR, SRC4N65TC, SRC4N65TF, SRC7N65D1, SRC7N65DTR, IRFZ24N, SRC7N65TF, SRK7002LT1G, SRM10N60TF, SRM10N60TC, SRM10N65TF, SRM10N65TC, SRM12N65TF, SRM12N65TC

Keywords - SRC7N65TC MOSFET specs

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