SRK7002LT1G Datasheet and Replacement
Type Designator: SRK7002LT1G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.225 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 0.115 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 10 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 7.5 Ohm
Package: SOT-23
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SRK7002LT1G Datasheet (PDF)
srk7002lt1g.pdf

LESHAN RADIO COMPANY, LTD.SRK7002LT1GSmall Signal MOSFETS-SRK7002LT1GSilicon N-Channel3 Features11) Low on-resistance.22) Fast switching speed.3) Low-voltage drive.SOT-23 (TO-236AB)4) Easily designed drive circuits.5) Easy to parallel.6) Pb-Free package is available.3d7) ESD Protected:2000V8) S- Prefix for Automotive and Other Applications Requiring Uniqu
ssrk7002lt1g.pdf

LESHAN RADIO COMPANY, LTD.DUAL N-CHANNEL ENHANCEMENT SSRK7002LT1GMODE FIELD EFFECT TRANSISTOR 3Low On-Resistance Fast Switching Speed 1Low-voltage drive 2Easily designed drive circuits SOT-23Pb-Free Package is available. The suffix G means Pb-free package 3ESD Protected:1000VOrdering Information(Pb-free) 1Device Marking Shipping SSRK7002LT1G RS 30
srk7002lt1.pdf

FM120-M WILLASTHRUSRK7002LT1Small Signal MOSFET BARRIER RECTIFIERS -20V- 200VSilicon N-ChannelFM1200-M 1.0A SURFACE MOUNT SCHOTTKYSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to o
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SI3460DV | CED05N8 | MC08N005C | AON6794 | STH110N10F7-6 | IRLR024 | BL10N70-A
Keywords - SRK7002LT1G MOSFET datasheet
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History: SI3460DV | CED05N8 | MC08N005C | AON6794 | STH110N10F7-6 | IRLR024 | BL10N70-A



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