SRK7002LT1G Datasheet and Replacement
Type Designator: SRK7002LT1G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.225 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.115 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 10 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 7.5 Ohm
Package: SOT-23
SRK7002LT1G substitution
SRK7002LT1G Datasheet (PDF)
srk7002lt1g.pdf
LESHAN RADIO COMPANY, LTD.SRK7002LT1GSmall Signal MOSFETS-SRK7002LT1GSilicon N-Channel3 Features11) Low on-resistance.22) Fast switching speed.3) Low-voltage drive.SOT-23 (TO-236AB)4) Easily designed drive circuits.5) Easy to parallel.6) Pb-Free package is available.3d7) ESD Protected:2000V8) S- Prefix for Automotive and Other Applications Requiring Uniqu
ssrk7002lt1g.pdf
LESHAN RADIO COMPANY, LTD.DUAL N-CHANNEL ENHANCEMENT SSRK7002LT1GMODE FIELD EFFECT TRANSISTOR 3Low On-Resistance Fast Switching Speed 1Low-voltage drive 2Easily designed drive circuits SOT-23Pb-Free Package is available. The suffix G means Pb-free package 3ESD Protected:1000VOrdering Information(Pb-free) 1Device Marking Shipping SSRK7002LT1G RS 30
srk7002lt1.pdf
FM120-M WILLASTHRUSRK7002LT1Small Signal MOSFET BARRIER RECTIFIERS -20V- 200VSilicon N-ChannelFM1200-M 1.0A SURFACE MOUNT SCHOTTKYSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to o
Datasheet: SRC4N65D1 , SRC4N65DTR , SRC4N65TC , SRC4N65TF , SRC7N65D1 , SRC7N65DTR , SRC7N65TC , SRC7N65TF , 8N60 , SRM10N60TF , SRM10N60TC , SRM10N65TF , SRM10N65TC , SRM12N65TF , SRM12N65TC , SRM20N65TF , SRM20N65TC .
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: CEM6056 | SQS484EN
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