All MOSFET. SRK7002LT1G Datasheet

 

SRK7002LT1G Datasheet and Replacement


   Type Designator: SRK7002LT1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.225 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 0.115 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 10 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 7.5 Ohm
   Package: SOT-23
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SRK7002LT1G Datasheet (PDF)

 ..1. Size:180K  lrc
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SRK7002LT1G

LESHAN RADIO COMPANY, LTD.SRK7002LT1GSmall Signal MOSFETS-SRK7002LT1GSilicon N-Channel3 Features11) Low on-resistance.22) Fast switching speed.3) Low-voltage drive.SOT-23 (TO-236AB)4) Easily designed drive circuits.5) Easy to parallel.6) Pb-Free package is available.3d7) ESD Protected:2000V8) S- Prefix for Automotive and Other Applications Requiring Uniqu

 ..2. Size:344K  lrc
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SRK7002LT1G

 0.1. Size:432K  lrc
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SRK7002LT1G

LESHAN RADIO COMPANY, LTD.DUAL N-CHANNEL ENHANCEMENT SSRK7002LT1GMODE FIELD EFFECT TRANSISTOR 3Low On-Resistance Fast Switching Speed 1Low-voltage drive 2Easily designed drive circuits SOT-23Pb-Free Package is available. The suffix G means Pb-free package 3ESD Protected:1000VOrdering Information(Pb-free) 1Device Marking Shipping SSRK7002LT1G RS 30

 4.1. Size:401K  willas
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SRK7002LT1G

FM120-M WILLASTHRUSRK7002LT1Small Signal MOSFET BARRIER RECTIFIERS -20V- 200VSilicon N-ChannelFM1200-M 1.0A SURFACE MOUNT SCHOTTKYSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to o

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History: SI3460DV | CED05N8 | MC08N005C | AON6794 | STH110N10F7-6 | IRLR024 | BL10N70-A

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