All MOSFET. IXTH12N90 Datasheet

 

IXTH12N90 Datasheet and Replacement


   Type Designator: IXTH12N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 145 nC
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 315 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO247
 
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IXTH12N90 Datasheet (PDF)

 7.2. Size:175K  ixys
ixtt12n150 ixth12n150.pdf pdf_icon

IXTH12N90

High Voltage VDSS = 1500VIXTT12N150ID25 = 12APower MOSFETIXTH12N150 RDS(on) 2.2 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-268 (IXTT)GSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 1500 VD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 1500 VVGSS Continuous 30 VTO-247 (IXTH)VG

 7.3. Size:105K  ixys
ixth10n100 ixtm10n100 ixth12n100 ixtm12n100.pdf pdf_icon

IXTH12N90

VDSS ID25 RDS(on)MegaMOSTMFET IXTH / IXTM 10N100 1000 V 10 A 1.20 IXTH / IXTM 12N100 1000 V 12 A 1.05 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C 10N

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