All MOSFET. IXTH12N90 Datasheet

 

IXTH12N90 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXTH12N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 145 nC
   trⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 315 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO247

 IXTH12N90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTH12N90 Datasheet (PDF)

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Datasheet: IXTH11N80 , IXTH11P50 , IXTH12N100 , IXTH12N45MA , IXTH12N45MB , IXTH12N50A , IXTH12N50MA , IXTH12N50MB , IRFZ48N , IXTH13N110 , IXTH13N80 , IXTH14N100 , IXTH14N80 , IXTH15N35MA , IXTH15N35MB , IXTH15N40MA , IXTH15N40MB .

 

 
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