SRM4N65D1 Datasheet and Replacement
Type Designator: SRM4N65D1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 52 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 65 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.47 Ohm
Package: TO-251
SRM4N65D1 Datasheet (PDF)
srm4n65.pdf

Datasheet 4A, 650V, N-Channel Power MOSFET SRM4N65General Description Symbol The Sanrise SRM4N65 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM4N65 break down voltage rating is 650V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high
srm4n60.pdf

Datasheet 4A, 600V, N-Channel Power MOSFET SRM4N60General Description Symbol The Sanrise SRM4N60 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM4N60 break down voltage rating is 600V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high
srm4n70.pdf

Datasheet 4A, 700V, N-Channel Power MOSFET SRM4N70General Description Symbol The Sanrise SRM4N70 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM4N70 break down voltage rating is 700V, which leads the system has enough margin in some sensitive application. It has a high rugged a
Datasheet: SRM12N65TC , SRM20N65TF , SRM20N65TC , SRM2N60 , SRM4N60D1 , SRM4N60DTR , SRM4N60U , SRM4N60TF , EMB04N03H , SRM4N65DTR , SRM4N65U , SRM4N65TF , SRM4N70 , SRM6N60D1 , SRM6N60DTR , SRM6N60TF , SRM6N70 .
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