SRM6N60D1 Datasheet and Replacement
Type Designator: SRM6N60D1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 105 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.86 Ohm
Package: TO-251
SRM6N60D1 substitution
SRM6N60D1 Datasheet (PDF)
srm6n60.pdf

Datasheet 6A, 600V, N-Channel Power MOSFET SRM6N60General Description Symbol The Sanrise SRM6N60 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM6N60 break down voltage rating is 600V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high
srm6n70.pdf

Datasheet 6A, 700V, N-Channel Power MOSFET SRM6N70General Description Symbol The Sanrise SRM6N70 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM6N70 break down voltage rating is 700V, which leads the system has enough margin in some sensitive application. It has a high rugged a
Datasheet: SRM4N60DTR , SRM4N60U , SRM4N60TF , SRM4N65D1 , SRM4N65DTR , SRM4N65U , SRM4N65TF , SRM4N70 , HY1906P , SRM6N60DTR , SRM6N60TF , SRM6N70 , SRM7N60 , SRM7N65 , SRM7N65D1-E1 , SRM7N65DTR-E1 , SRM7N65TF-E1 .
History: LTP70N06 | IXFA130N10T2
Keywords - SRM6N60D1 MOSFET datasheet
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History: LTP70N06 | IXFA130N10T2



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